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  • 1
    Electronic Resource
    Electronic Resource
    Zn-Impurity-Induced Structual Disorder in AlGaAs Alloy (1986)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 10-12 (Jan. 1986), p. 1201-1206 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/59/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.10-12.1201.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Preparation and characterization of the LiInSe2 thin films (1983)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1723-1727 
    Details
    ISSN: 0392-6737
    Keywords: Methods of thin-film deposition
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Sono stati preparati film di LiInSe2 di tipop con il metodo di evaporazione rapida su Si di tipon e GaP di tipon. Sono state usate varie tecniche di caratterizzazione come l'analisi con raggi X, l'analisi dello scattering all'indietro di Rutherford (RBS) e la microscopia elettronica di scansione per valutare la qualità dei film. Si dimostrano le rettificazioni delle eterogiunzioni preliminari.
    Abstract: Резюме Приготовляются пленки LiInSe2 p-типа методом быстрого испарения на Sin-типа и GaPp-типа. Для оценки качества плчества пленок используются различные методики: рассеяние рентгеновских лучей, обратное резерфордовское рассеяние, сканирующая электронная микроскопия. Демонстрируется выпрямяюшее действие гетеропереходов.
    Notes: Summary p-type LiInSe2 films have been prepared by the rapid evaporation method onn-type Si andn-type GaP. Various characterization techniques such as the X-ray analysis, the Rutherford backscattering (RBS) analysis and the scanning electron microscopy were used to evaluated the quality of the films. The rectifications of the preliminary heterojunctions are demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457857
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  • 3
    Electronic Resource
    Electronic Resource
    A photoluminescence study on lithium ternary compounds (1983)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 2029-2033 
    Details
    ISSN: 0392-6737
    Keywords: Photoluminescence
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto In questo lavoro si studiano gli spettri di fotoluminescenza di cristalli singoli di LiInS2 e LiInSe2. Si verifica, tramite misurazioni ESR, che l'origine della colorazione e dell'emissione profonda a 460 nm su LiInS2 è dovuta a ioni Fe3+. La cosiddetta «emissione presso l'estremità della banda» è stata osservata a 600 nm e a 77 K su monocristalli LiInSe2 giallo chiaro. Si è mostrato che il LiInSe2 rosso ha una struttura di banda a coda con impurità residue ad alta densità, attraverso un confronto tra i risultati delle misurazioni elettriche e di fotoluminescenza. Alcume emissioni profonde sono ottenute su LiInSe2 giallo e rosso.
    Abstract: Резюме В этой работе исследуются спектры фотолюминесценции монокристаллов LiInS2 и LiInSe2. С помощью ESR измерений показывается, что природа окраски и глубина излучения при 460 нм в LiInS2 связана с ионами Fe3+. Наблюдается так называемое излучение на «краю зоны» с длиной волны 600 нм при 77 К в светло-желтых монокристаллах LiInSe2. Сравнение результатов электрических и фотолюоминесцентных измерений показывает, что красный LiInSe2 имеет зонную структуру при высокой плотности остаточных примесей. На желтых икрасных монокристаллах LiInSe2 получены глубокие излучения.
    Notes: Summary The photoluminescence spectra of LiInS2 and LiInSe2 single crystals are investigated in this work. The origin of the coloration and deep emission at 460 nm on LiInS2 is estimated through ESR measurements to be due to Fe3+ ions. The so-called «near-band-edge emission» was observed at 600 nm and at 77 K on the light yellow LiInSe2 single crystals. Through a comparison between the results of electrical and photoluminescence measurements it is shown that the red LiInSe2 has a tailing band structure with high-density residual impurities. Some deep emissions are obtained on yellow and red LiInSe2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457904
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  • 4
    Electronic Resource
    Electronic Resource
    High-power InGaAs-GaAs strained quantum well lasers with InGaP cladding layers on p-type GaAs substrates (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3212-3214 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report device results from channel guide InGaAs-GaAs strained quantum well lasers with In0.49Ga0.51P cladding layers (λL = 980 nm). Channel guide lasers are demonstrated with a new current blocking scheme using a p-n-p InGaP junction on a p+-GaAs substrate. The laser structure is grown by metalorganic vapor phase epitaxy on the channeled n-InGaP layer. The reverse biased p-n-p InGaP junction is shown to be effective in preserving the current blocking properties for InGaAs-GaAs-InGaP lasers. The uncoated lasers show cw laser thresholds of 11 mA at RT and high output powers of 125 mW.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351437
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence of GaAs grown dilutely doped with Si by molecular beam epitaxy with modulated source supplies (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1862-1864 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs layers grown dilutely doped with Si by molecular beam epitaxy (MBE) with modulated-source supplies have been characterized using low-temperature photoluminescence. Free- and bound-exciton emissions were observed in the near-band-edge region of photoluminescence spectra. A change in the spectral features of impurity-related emissions was induced by varying the modulation of the Si molecular beam in the MBE growth. It is found that the Si atoms are incorporated as either donors or acceptors, according to the timing of the Si supply during the As-source supply in MBE growth. We achieved Si doping on addressed sites by varying the timing of the Si supply.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102169
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  • 6
    Electronic Resource
    Electronic Resource
    Automatic quasiphase matching for second-harmonic generation in a periodically poled LiNbO3 waveguide (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 22-27 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel technique is proposed and experimentally demonstrated to achieve a quasiphase matching (QPM) condition for second-harmonic generation (SHG) in a nonlinear optical waveguide with a periodically poled LiNbO3 waveguide. The fundamental wave satisfying the QPM conditions is automatically generated when the laser diode (LD) and the optical waveguide are optically connected. Using the proton-exchanged LiNbO3 waveguide with a periodically poled grating, which was fabricated by Ti diffusion and the InP/InGaAsP LD with antireflection-coated facets, it was confirmed that the LD oscillated at the wavelength satisfying the QPM condition, and SHG was observed simultaneously. Using a Ti:sapphire laser, it was also confirmed that the SHG was realized at the third order of QPM condition, as was expected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350748
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  • 7
    Electronic Resource
    Electronic Resource
    Inelastic light scattering from heavily doped and highly compensated GaAs:Si (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2382-2386 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first-order Raman scattering from heavily doped and highly compensated GaAs:Si has been measured with a constant impurity concentration of 1.1 × 1019 cm−3. The damped q=0 L− and L+ branches due to the compensation-limited low mobilities have been observed. The impurity-induced forbidden mode which had been found in uncompensated p-GaAs:Zn has not appeared in the measured spectra. The line-broadening of plasmon-coupled LO phonon, L(q), and line and peak shift of TO phonon line are attributed to the impurity-induced Fröhlich interaction and the self-energy effect, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336338
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence study of cavity-polariton-mode splitting using high-contrast selectively oxidized AlAs/GaAs mirrors (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1869-1871 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) has been used to study cavity-polariton-mode splitting in a strongly coupled microcavity that utilizes high-contrast oxidized AlAs/GaAs mirrors. The cavity structure was specifically designed to reduce nonradiative recombination at the oxide–semiconductor interfaces and takes full advantage of the high-contrast mirrors to reduce the effective cavity length, and increase the exciton–photon coupling strength. The cavity-polariton splitting measured at room temperature was 6.2 meV, which we believe to be the first ever reported PL splitting measured at room temperature using an oxide-based microcavity. The temperature dependence of the cavity-polariton splitting has also been measured and is well described within a semiclassical polariton model. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123696
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  • 9
    Electronic Resource
    Electronic Resource
    Temperature dependence of InGaAs/GaAs quantum well microcavity light-emitting diodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3598-3600 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a systematic investigation of the emission properties of semiconductor microcavity light-emitting diodes (MC-LEDs) with different cavity detuning. Evidence that varying the cavity detuning leads to temperature insensitive output characteristics is provided by changes in the temperature dependence of the slope efficiency extracted from the light output versus current characteristics. For resonantly tuned devices the slope efficiency decreases monotonically with increasing temperature. However when the cavity peak is detuned to long wavelength with respect to the room temperature quantum well (QW) emission, temperature insensitive characteristics are achieved. Compared to a noncavity type LED, enhanced efficiency and narrow spectral linewidth have been observed for the MC-LEDs with the highest output efficiency achieved when the QW emission and cavity peak are exact resonant. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123193
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  • 10
    Electronic Resource
    Electronic Resource
    Temperature and polarization dependence of LiNbO3 quasiphase-matched wavelength converters (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1933-1935 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature and polarization characteristics of 1.55-μm-band LiNbO3 quasiphase-matched (QPM) wavelength converters have been studied by second-harmonic generation (SHG). It is found that the shift of the QPM wavelength is linearly proportional to temperature over the measured temperature range between 10 and 40 °C, with a temperature tolerance (corresponding to a 3 dB reduction in the QPM conversion efficiency) of greater than 10 °C for a 10-mm-long device. With respect to the angle θ of the injected fundamental light polarization direction, the SHG power changes as a function of sin4 θ, with a tolerance of over 60°. Theoretical explanations for the observed results are also presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123732
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