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  • Electronic Resource  (3)
  • 1990-1994  (3)
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  • Electronic Resource  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Stress, strain, and microstructure in thin tungsten films deposited by dc magnetron sputtering (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 988-995 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tungsten thin films were deposited on glass substrates by direct-current planar magnetron sputtering. The induced thickness-averaged film stress within the plane of the film was determined with the bending-beam technique and changed from compressive to tensile on increasing working-gas pressure. The microstructure of these films was investigated by cross-sectional transmission electron microscopy. Compressively stressed films consisted of tightly packed columnar grains, whereas in films with a maximum value for the tensile stress the onset of a void network surrounding the columnar grains was observed. High-pressure conditions resulted in dendritic-like film growth, which brought about complete relaxation of internal stresses. The α phase was predominantly found in films under compression, while an increasing amount of β-W coincided with the transition to the tensile stress regime. Special attention was focused on stress-depth dependence and the development of two overlapping line profiles in x-ray diffraction (XRD) diagrams with film thickness as observed in compressively stressed films. Both findings constitute a remarkable result in respect of stress-depth distributions in thin films: the presence of two sublayers in a monophase film, one experiencing tensile and the other compressive stress. The occurrence of a modest tensile stress maximum present in the substrate-adjacent part of the film was explained by an elastically accommodated volume reduction, associated with a phase transformation (β into α) of initially formed β-W. Furthermore, a comparison of bending-beam stresses and XRD lattice strains (utilizing the sin2 ψ method) provided a consistent view of the mechanical behavior of the differently strained sublayers in this monophase (α-W) film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354842
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Stress, strain, and microstructure of sputter-deposited Mo thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4301-4308 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mo thin films were deposited on glass substrates using direct-current (dc) planar magnetron sputtering. Mechanical determination of the internal stresses, using the bending-beam technique, yielded typical compressive-to-tensile stress transition curves with increasing working-gas pressure. The microstructure of the compressively stressed films consists of tightly packed columns, whereas in the tensily stressed films the development of a void network structure surrounding the columnar grains is observed. At elevated working-gas pressures the onset of microcolumns is observed in the initial stage of film growth. Determination of lattice strains by x-ray diffraction (XRD), utilizing the sin2 ψ method, encounters more difficulties than the more straightforward stress determination by the bending-beam method. Here special attention is focused on deviations from linear dependence of dψ with sin2 ψ along with asymmetry of XRD line profiles that results from stress-depth profiles as well as lateral stress distributions in the tensily stressed films. These anomalies and the discrepancy between bending-beam stresses and XRD lattice strains, observed for high working-gas pressures, can be interpreted in terms of microstructural features revealed by cross-sectional transmission electron microscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349108
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Reliability and microstructure of Al-Si-V-Pd alloy films for use in ultralarge scale integration (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 704-706 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New data on a highly reliable interconnect material based on aluminum will be presented. As compared with conventional Al-Si-Cu alloy films, quaternary Al-Si-V-Pd films with only 0.1 at. % vanadium and 0.1 at. % palladium combine excellent plasma etchability with good corrosion resistance. Electromigration tests of Al-Si-V-Pd films have shown a surprisingly high stability at 180 °C. Studies of microstructural attributes show: (a) for Al-Si-V-Pd relative to Al-Si, texture is not significantly changed and average grain size is slightly increased, and (b) the dominant factor leading to a highly stable microstructure is the combined presence of finely dispersed, small precipitates of both (Al,V) and (Al,Pd) phases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111040
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    Paper (German National Licenses)
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