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  • Electronic Resource  (14)
  • 1985-1989  (14)
Material
  • Electronic Resource  (14)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2139-2141 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy and Rutherford backscattering were used with polycrystalline Si films implanted at 100 keV with 3×1016 arsenic ions/cm2. During annealing, grain growth occurred first in the implanted portion, then arsenic diffused into the unimplanted poly-Si, and finally grain growth occurred in this region. We believe that arsenic in the implanted region accumulates on grain boundaries during grain growth and subsequently diffuses along grain boundaries into the unimplanted region where grain growth occurs when arsenic can diffuse into the interior of the polycrystalline Si grains.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 421-423 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability of CrSi2 fine lines on undoped chemical vapor deposited polycrystalline silicon was investigated. Heat treatments were in vacuum at temperatures between 500 and 950 °C. Hillock growth resulting from dissolution of silicon and subsequent regrowth in the silicide resulted in degradation at temperatures as low as 650 °C. We found that the degradation occurs preferentially at line edges. It is suggested that the edge preference is due to silicide deformation that is required at recrystallization sites.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4426-4432 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion behavior of arsenic in polycrystalline silicon (poly-Si) and the grain growth of arsenic-doped poly-Si with a TiSi2 overlying layer were investigated by MeV 4He2+ backscattering techniques and transmission electron microscopy. Fine-grain (30–40 nm) poly-Si was implanted with 1 or 3×1016 arsenic ions/cm2 and annealed in two stages: (1) at 885 or 985 °C in an oxygen atmosphere to distribute (homogenize) the arsenic throughout the poly-Si layer and (2) at 750 °C in a vacuum ambient with deposited Ti or TiSi2 overlay to determine the out-diffusion of arsenic. After a 750 °C anneal for 8 h, there was essentially no arsenic redistribution in the sample homogenized at 985 °C, but a loss of 40% arsenic was observed in the sample homogenized at 885 °C. The Si grains in the 280-nm-thick poly-Si layer grew in size during homogenization, up to 400 nm at 985 °C and 150 nm at 885 °C. No grain growth was observed after a 750 °C, 8-h anneal of doped poly-Si films in contact with Ti.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1998-2001 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence and redistribution of the inert gas Kr in chromium silicide formation have been investigated by MeV He backscattering spectrometry and transmission electron microscopy. It was found that krypton implanted in the chromium film remains stationary with respect to the chromium during silicide formation, but krypton implanted in the silicon substrate accumulate at the silicon/silicide interface. The effect of krypton on the rate of silicide formation is much more pronounced when the krypton is in the chromium rather than in the silicon substrate. The thermal growth of CrSi2 is linear with time in a krypton-free sample, but becomes parabolic when the krypton is incorporated in the silicide at a concentration of 1 at. %. The activation energy associated with Si diffusion through CrSi2 is increased from 1.4±0.1 eV to 2.6±0.1 eV by the presence of krypton in the silicide. The results are interpreted as being due to segregation of krypton on grain boundaries in CrSi2 and subsequent retardation of diffusion along the boundaries.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3620-3620 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mischmetal (MM) has been considered as a possible substitute for the rare-earth component in both permanent magnets1,2 and hydrogen storage intermetallics. We have investigated the magnetic and structural properties of a mischmetal-nickel-iron intermetallic and its hydride using magnetization, Mössbauer, x-ray diffraction, and SEM measurements. Magnetic susceptibility measurements were made between room and liquid-nitrogen temperatures. There was a change in the magnetic character of the unhydrided sample at 140 K. Hydriding produced a large increase in the susceptibility with a corresponding change in the magnetization at low temperatures. The 57Fe Mössbauer spectra of the intermetallic yielded a doublet at room temperature and demonstrated a change in magnetic behavior similar to the magnetization results at low temperatures. Experimental data were used to interpret the hydrogen absorption mechanism acting in this intermetallic and the results are discussed with respect to previously proposed models for rare earth-transition metal compounds.3,4
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1189-1194 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of the nickel silicide, Ni5Si2, which forms during solid-state reactions using self-supporting Ni-Si lateral-diffusion couples, has been studied using high-resolution electron microscopy (HREM) and selected-area electron diffraction. Two different structures for Ni5Si2 have been identified, one of which is consistent with the crystal structure which has been reported to have an actual composition of Ni31Si12. There is evidence for the existence of a third structure. Variations in the distribution of these structures and the presence of planar defects may account for the reported composition range of Ni5Si2 in the Ni-Si phase diagram. The observed HREM images are compared with computer simulated images.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 300-304 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pd50Ti50 and Pt50Ti50 alloy films were deposited on stainless-steel substrates and irradiated with ion beams. The samples were tested on pin-on-disk wear equipment and analyzed by Rutherford backscattering spectrometry and scanning and transmission electron microscopy. Adding Pd50Ti50 and Pt50Ti50 as a surface layer to stainless steel resulted in reduced wear and friction. Xe implantation slightly improved tribomechanical properties, while N implantation led to a dramatic reduction in wear and friction. The improvement was thought to be associated with nitride precipitation hardening and/or forming lubricious oxides during sliding. The as-deposited films exhibited amorphous structures and transformed to equilibrium compounds upon annealing. Sliding tests on amorphous and crystalline films did not show a significant difference in friction and wear behavior.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1505-1514 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of arsenic redistribution in Ni, Cr, Ta silicide forming systems has been performed by implanting arsenic into metal layers or into single-crystal silicon substrates. During silicide formation arsenic accumulates near the interface region, incorporates in the silicide, or diffuses out of the silicide into the surrounding ambient. Differences in the dopant redistribution are related to the arsenic initial location relative to the moving species in silicide formation and the diffusivity of dopant atoms at the metal-silicon reaction temperature.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 258-263 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy (TEM) has been utilized to study the nickel-silicide growth in self-supported lateral-diffusion, thin-film couples by overlapping deposited layers of Ni and Si between two silicon oxide deposited films. Energy-dispersive x-ray spectroscopy, microdiffraction, and selected area diffraction were used to identify the Ni-silicide phases and their crystal structures. Long-grain growth of Ni2Si, as a result of phase-boundary migration induced by diffusion, was observed during in situ annealing between 500 and 750 °C in TEM. No preferred orientation or particular crystallographic relationship was found among the long grains.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 85 (1986), S. 4747-4748 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A method is presented for the measurement of the chemisorptive reactivity of transition metal cluster ions at near room temperature. Similar to a technique introduced previously for neutral clusters [Rev. Sci. Instrum. 56, 2123 (1985)], this cluster ion method utilizes a fast-flow reactor attached to a supersonic, laser vaporization metal cluster source, followed by time-of-flight mass spectral analysis of the cluster ions as a function of reactant concentration. Results are presented for clusters of cobalt and niobium in the 1–22 atom size range for their chemisorptive reactions with CO, CO2, and N2. Both Nb+n and Co+n clusters displayed chemical reactivity that is remarkably similar to that of the corresponding neutral clusters. For both charge states of each metal, CO was found to chemisorb with a rate which varied in a slow, monotonically increasing fashion with cluster size. The chemisorption rate of N2 and CO2, on the other hand, was found to be significantly slower than that of CO and sharply dependent upon the cluster size, this dependency being roughly independent of whether the transition metal cluster had a net positive or neutral charge. Photodissociation measurements of the mass-selected positive ion chemisorption products showed that the desorption energy of these products parallels the relative reaction rate.
    Type of Medium: Electronic Resource
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