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  • Electronic Resource  (2)
  • 61.80  (1)
  • Biocompatibility  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Biomaterialien – humane Toleranz und Integration (1999)
    Springer
    Der Chirurg 70 (1999), S. 847-857 
    Details
    ISSN: 1433-0385
    Keywords: Key words: Biomaterials ; Biocompatibility ; Process engineering ; Reciprocal technology transfer. ; Schlüsselwörter: Biomaterialien ; Biokompatibilität ; Prozesstechnologien ; wechselseitiger Technologietransfer.
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Description / Table of Contents: Zusammenfassung. Biokompatible Werkstoffe und zugehörige Prozesstechnologien, mit denen eine optimale Strukur- und Oberflächenkompatibilität von Implantaten erreicht werden soll, werden vorgestellt. „Vital-avital composites“ für das „tissue engineering“, Zellkulturmodelle, poröse Keramiken und abbaubare Polymere werden beispielhaft dargestellt. Ein Hauptaspekt liegt auf der Konvertierung von Resultaten der Grundlagenforschung in klinische Anwendungen und auf dem Austausch von Technologien aus dem nichtmedizinischen in den medizinischen Bereich und umgekehrt.
    Notes: Summary. Biomaterials and related process engineering in order to obtain optimal surface and structural biocompatibility of implants and devices are presented. Vital-avital composites for tissue engineering, cell culture models, porous ceramics and degradable polymers are introduced as examples. Emphasis is laid on the conversion of basic research results into clinical applications and on the exchange of technologies from the non-medical into the medical field and vice versa.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s001040050734
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    TEM analysis of the influence of dose on damage behavior in MeV Au2+-implanted silicon (1992)
    Springer
    Applied physics 54 (1992), S. 124-131 
    Details
    ISSN: 1432-0630
    Keywords: 81.40 ; 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Extended lattice damage created by implantation of 3.6 MeV Au2+ ions has been investigated using transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). Systematic observations of damage for Au2+ ions implanted with varying doses into silicon are explained in terms of a model. The origin of two distinct bands of extended defects is explained in terms of annealing of the central region of implant-damage, during the course of the implantation. Two distinct bands of Au precipitates are observed in high-dose implanted samples. This observation is explained as being the result, in part, of segregation of gold in front of a recrystallizing front, and in part, of gettering of dopant-atoms to nodes in a dislocation network. The network arises as a result of dynamic annealing of damaged crystalline silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323898
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    Paper (German National Licenses)
    Fulltext
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