ISSN:
0142-2421
Keywords:
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Physics
Notes:
For the first time, high-frequency phonon scattering has been used to study ion implantation damage in silicon wafers. Diffusive scattering of reflected heat pulses was found to be greatly increased by self implantation at a dose of 1015 cm-2, which is known to produce an amorphous layer. Subsequent low-temperature (250°C) annealing produced a reduction in scattering which could be attributed to smoothing of the amorphous-crystalline (a-c) interface, i.e. to a reduction in the short-wavelength components of the interface roughness.
Additional Material:
4 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/sia.740180810
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