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  • 11
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 88 (1984), S. 5855-5857 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 12
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 88 (1984), S. 1631-1634 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 13
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 93 (1989), S. 4267-4276 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 14
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 90 (1986), S. 842-847 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 15
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 95 (1991), S. 7427-7432 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 16
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The working frequency of Mn-Zn ferrites in switching power supply has been increased recently. Therefore, the manufacturing Mn-Zn ferrites with low loss at high frequency is very important. However, there were few reports concerning the core loss of Mn-Zn ferrites.1 It is beneficial to study the parameters affecting the core loss of Mn-Zn ferrites. Therefore, we studied the influence of atmosphere on the hysteresis loss (Wh) and eddy current loss (We) for different compositions in this work. Three compositions, Mn0.70Zn0.21−xFe2.09+xO4 (x=0, 0.01, 0.02), were prepared by traditional ceramic process. The sintering condition is 1385 °C for 4 h. Then, the samples are annealed at 1100 °C for 24 h in different oxygen partial pressure (0.015–1.0 vol %). Experimental results show that both We and Wh have minimum value at different oxygen partial pressure for samples with different composition. Increasing Fe content which raises the Fe++ concentration shifts the We and Wh minimum point to higher annealing oxygen partial pressure. It is mainly due to the oxidation of Fe++ and the transition of conduction mechanism, and it will be further discussed later. We can obtain the lowest core loss for using 10 and 100 kHz are samples with composition x=0 annealed in 0.07 and 0.2 vol % oxygen partial pressure, respectively. Summarily, for application to low loss at different working frequency, it is found that different optimized atmosphere should be controlled during annealing for different composition.
    Type of Medium: Electronic Resource
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  • 17
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7288-7293 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of elastic strain induced by lattice mismatch on the effective mass and band offset at Γ point are studied in this article. We found that the effective masses (electron, light- and heavy-hole) become anisotropic in a strained layer. The theoretical calculations were made using a method of linear combination of atomic orbitals, and the overlapping integrals are adjusted in accordance with the change of atomic distance. In the kz direction, the effective mass ratios (strain: unstrain) of the electron of InxGa1−xSb/GaSb structure were found to vary from 1 to 3.38 for 0≤x≤1, the corresponding ratios of the light- and heavy-hole are 1 to 3.38 and 1 to 0.99, respectively. In the kx and ky direction, the ratios of the light- and heavy-hole are 1 to 1.02 and 1 to 1.13, respectively. For unstrained and strained interfaces, the band offset ratios of 90:10 and 57:43 (conduction band: valence band) are obtained, respectively. Experimental studies were also performed on the InxGa1−xSb/GaSb strained-layer superlattice sample. It was found that the theoretical calculations agree well with experimental results in this study.
    Type of Medium: Electronic Resource
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  • 18
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2892-2895 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We obtain undoped n-type GaSb epilayers by low-temperature metalorganic chemical vapor deposition at a low growth temperature of 450 °C reproducibly. Different conduction types of GaSb and different energy levels are compared by photoluminescence spectra. For n-type undoped GaSb, the FWHM of dominant peak and bound exciton are 11 and 1.3 meV, respectively. Because semi-insulating GaSb substrates cannot be obtained, we cannot use the Hall effect to determine the carrier concentration and mobility of the homoepilayer. In order to identify the conduction types of GaSb, ohmic contact and Schottky barrier are made by Au/Ge/Ni and Au, respectively. The concentrations of undoped n-type GaSb homoepilayers obtained from I-V and C-V measurements are 1.44×1017–3.0×1017 cm−3, respectively. The mobility and concentration of undoped p-type GaSb heteroepilayers are 758 cm2/V s and 9.0×1015 cm−3 at 300 K, respectively.
    Type of Medium: Electronic Resource
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  • 19
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 8349-8352 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped GaSb epilayers were grown on GaSb and GaAs substrates using the metalorganic chemical vapor deposition (MOCVD) technique, and photoluminescence (PL). Hall effect measurements were used to characterize the undoped epilayers. For undoped GaSb epilayers, four energy levels revealed by PL spectra are shown to be due to acceptors, using KTdp/dEf va Ef-Ev data obtained from Hall effect results, where p is the hole concentration, Ef and Ev are the Fermi level and the top of valence band, respectively. The acceptor levels lie at 3, 58, 80, and 130 meV above the top of valence band, respectively. The donor level is 15 meV below the bottom of the conduction band. These acceptor levels exist in almost all of the undoped p-type GaSb epilayers grown at high temperature, while the donor level exists only in the undoped n-type GaSb epilayers grown by low-temperature MOCVD. It is found that these levels may be changed using the different growth temperatures.
    Type of Medium: Electronic Resource
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  • 20
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6247-6249 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-phase Fe4N and (Fe1−xNix)4N compounds have been synthesized in a continuous form by heat treating iron and iron-nickel alloy sheets at various temperatures under NH3/H2 atmospheres. The Fe4N sheet has a high room-temperature magnetization value of 179 emu/g (2.14 μB/Fe), which is only slightly less than 218 emu/g (2.19 μB/Fe) observed in pure iron. The magnetic moments of the Fe-Ni alloy nitrides decreased monotonically as x was increased, in contrast to those for the starting alloys Fe1−xNix which exhibited a peak value around x=0.05. The decrease in magnetic moment with nickel content in the alloy nitrides was close to the value anticipated by magnetic dilution from nickel. The coercive force is about 5 Oe and is slightly decreased by the Ni substitution. The Fe-nitride offers a significantly improved corrosion resistance over pure iron. Even further improvement is obtained in the (Fe1−xNix)4N system with only slight sacrifice in magnetic moment. The addition of nickel has been found to noticeably improve the mechanical ductility of the normally brittle Fe4N compound. Theses nitrides also exhibit significantly increased electrical resistivity and wear resistance, and may be useful for a variety of technological applications.
    Type of Medium: Electronic Resource
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