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  • Electronic Resource  (33)
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  • Electronic Resource  (33)
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  • 11
    Electronic Resource
    Electronic Resource
    Optical absorption study of ion beam synthesized polycrystalline semiconducting FeSi2 (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1958-1963 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion beam synthesized polycrystalline semiconducting FeSi2 on Si(001) has been investigated by transmission measurements at temperatures between 10 and 300 K. The existence of a minimum direct band gap was demonstrated and its variation with the temperature was studied by means of a three-parameter thermodynamic model and the Einstein model. Band tail states and states on a shallow impurity level were found to give rise to the absorption below the fundamental edge. The presence of an Urbach exponential edge was shown and the temperature dependence of the Urbach tail width was also studied based on the Einstein model. A strong structural disorder associated with grain boundaries between and within the FeSi2 grains and their related defects was found to be the dominant contribution at room temperature. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360167
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  • 12
    Electronic Resource
    Electronic Resource
    Comparative study of silicon nitride encapsulated and phosphine overpressure annealing on the interdiffusion of InxGa1−xAs-InxGa1−xAsyP1−y heterostructures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1463-1465 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal interdiffusion on the group-V sublattice in InxGa1−xAs-InxGa1−xAsyP1−y quantum-well structures has been characterized for samples annealed either with silicon nitride encapsulation or under a phosphine overpressure in two different metalorganic vapor-phase-epitaxy reactors under different phosphine overpressures. Under all conditions the interdiffusion lengths were found to be comparable, with only small effects due to the phosphine overpressure. This suggests that interdiffusion results obtained from silicon nitride capped samples can be applied to the interdiffusion that occurs during growth conditions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358893
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  • 13
    Electronic Resource
    Electronic Resource
    Photoluminescence of deep levels in ion-implanted AlxGa1−xAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1404-1406 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effect of ion implantation of donors into AlxGa1−xAs epilayers and have shown the presence of two deep level luminescence centers whose emission energies are strongly dependent on aluminum concentration. The variation of the intensity of these levels with annealing conditions gives an activation energy for their annihilation and this is found to be in agreement with that obtained from electrical data. From this, a model for the electrical activation of sulphur-implanted GaAs is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105206
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  • 14
    Electronic Resource
    Electronic Resource
    Optical characterization of silicon-on-insulator material obtained by sequential implantation and annealing (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2443-2445 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical characterization of silicon-on-insulator structures formed by sequential implantation and annealing (SIA) has been carried out. The infrared transmission spectra show peaks characteristic of a thermal oxide, and confirm the high quality of the buried oxide. Moreover, the spectra obtained from these SIA samples, in comparison to those obtained from equivalent samples made with a single implant, show a shift of the main absorption peak to higher wave numbers, which can be attributed to excess oxygen. The higher concentration of oxygen in the SIA samples is corroborated by photoluminescence measurements which show the presence of dislocation-related bands broadened by the presence of oxygen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104178
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  • 15
    Electronic Resource
    Electronic Resource
    Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained-layer quantum wells (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1986-1988 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence in InGaAs/GaAs strained-layer quantum wells is strongly quenched by temperatures above 10–100 K, depending on the well width. Analysis of this dependence shows that the quenching mechanism is thermal activation of electron-hole pairs from the wells into the GaAs barriers, followed by nonradiative recombination through a loss mechanism in bulk GaAs. The addition of Al to the barriers to improve confinement eliminates loss through this route but introduces another loss mechanism, characterized by an activation energy independent of well width and with a smaller pre-exponential factor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103987
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  • 16
    Electronic Resource
    Electronic Resource
    Metastable γ phase in ion beam synthesized FeSi2 (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1784-1786 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion beam synthesized iron silicide (FeSi2) (200 keV, 350 °C, 4×1017 Fe+/cm2) was studied by transmission electron microscopy. Face-centered cubic FeSi2 (γ phase) was observed in the as-implanted sample and the samples annealed at temperatures up to 600 °C. It is suggested that the formation of the equilibrium semiconducting FeSi2 (β phase) is preceded via a transition γ phase due to its better lattice match with the silicon matrix. The absence of metallic FeSi2 (α phase) can be attributed to the high iron dose implantation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116666
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  • 17
    Electronic Resource
    Electronic Resource
    Thermal processing of strained GaInAs/GaAs high hole mobility transistor structures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1116-1118 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the resistance to thermal processing of a realistic strained-layer device structure: a GaAs/GaInAs p-type modulation-doped field-effect transistor layer. The integrity of the structure was monitored using the photoluminescence from the strained quantum well in the active region of the structure. No evidence of mixing or strain relaxation was observed when samples were annealed at 750 °C for 5 h. At higher temperatures, 900 °C and above, mixing is observed and values for the interdiffusion constants and the activation energy obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102585
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  • 18
    Electronic Resource
    Electronic Resource
    The activation energy for GaAs/AlGaAs interdiffusion (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4842-4846 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present data of the interdiffusion coefficient of AlGaAs/GaAs over the temperature range 750–1150 °C, and obtain EA and D0 values of 3.6±0.2 eV and 0.2 (with an uncertainty from 0.04 to 1.1) cm2/s, respectively. These data are compared with those from the literature taken under a wide range of experimental conditions. We show that despite the range of activation energies quoted in the literature all the data can be described using a single activation energy. Using this value of EA to fit the published data and then determining D0 for each data point we find that the published data fall into two clusters. One, for samples annealed under a gallium rich overpressure and a second for As rich or capped anneals. This result can be explained by the diffusion in all cases being governed by a single mechanism, vacancy-controlled second-nearest-neighbor hopping. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366345
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  • 19
    Electronic Resource
    Electronic Resource
    Interdiffusion in InGaAs/GaAs: The effect of growth conditions (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 232-236 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of growth temperature and group-V to group-III flux ratio on the intermixing process in molecular beam epitaxial grown InxGa1−xAs/GaAs multiquantum wells were studied by means of photoluminescence coupled with repetitive thermal anneal experiments. We have shown that, for a wide range of growth conditions (growth temperatures from 565 to 636 °C and flux ratios from 5:1 to 25:1) the interdiffusion is controlled solely by a constant background concentration of vacancies which are probably introduced into the substrate during its manufacture. We have shown that, only growth at very low temperatures (470 °C) will result in appreciable excess vacancies. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368079
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  • 20
    Electronic Resource
    Electronic Resource
    Superstrained superlattices: A processing approach (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 462-463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained layer semiconductor heterostructures produced by molecular-beam epitaxy or metalorganic chemical vapor deposition growth are limited in thickness by relaxation producing dislocations, if a critical thickness tc is exceeded. We propose that, for a given thickness, strain values up to twice as large may be induced by post-growth processing with selective diffusion of the elemental constituents of the heterostructure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343851
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