Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
56 (1990), S. 1116-1118
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have studied the resistance to thermal processing of a realistic strained-layer device structure: a GaAs/GaInAs p-type modulation-doped field-effect transistor layer. The integrity of the structure was monitored using the photoluminescence from the strained quantum well in the active region of the structure. No evidence of mixing or strain relaxation was observed when samples were annealed at 750 °C for 5 h. At higher temperatures, 900 °C and above, mixing is observed and values for the interdiffusion constants and the activation energy obtained.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.102585
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