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  • 21
    Electronic Resource
    Electronic Resource
    Gas-source molecular beam epitaxy growth of an 8.5 μm quantum cascade laser (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2593-2595 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate preliminary results for an 8.5 μm laser emission from quantum cascade lasers grown in a single step by gas-source molecular beam epitaxy. 70 mW peak power per two facets is recorded for all devices tested at 79 K with 1 μs pulses at 200 Hz. For a 3 mm cavity length, lasing persists up to 270 K with a T0 of 180 K. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119338
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  • 22
    Electronic Resource
    Electronic Resource
    High power InAsSb/InPAsSb/InAs mid-infrared lasers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2430-2432 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate high-power InAsSb/InPAsSb laser bars (λ(approximate)3.2 μm) consisting of three 100-μm-wide laser stripes of 700 μm cavity length, with peak output power up to 3 W at 90 K, and far-fields for the direction perpendicular to the junction as narrow as 12° full width half maximum. Spectra and far-field patterns of the laser bars are shown to have excellent characteristics for a wide range of operating conditions, suggesting the possibility of even higher light power emission with good beam quality. Joule heating is shown to be the major factor limiting higher power operation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120082
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  • 23
    Electronic Resource
    Electronic Resource
    Photoluminescence study of InAsSb/InAsSbP heterostructures grown by low-pressure metalorganic chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1614-1616 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence has been measured for double- and separate-confinement InAsSb/InAsSbP heterostructures grown by low-pressure metalorganic vapor deposition. A measurement of the integrated luminescence intensity at the temperature range of 77–300 K shows that over a wide range of excitation level (1–5×102 W/cm2) the radiative transitions are the dominant mechanism below T∼170 K. Auger recombination coefficient C=C0 exp(−Ea/kT) with C0≈5×10−27 cm6/s and Ea≈40 meV has been estimated. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117048
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  • 24
    Electronic Resource
    Electronic Resource
    Long-term reliability of Al-free InGaAsP/GaAs (λ=808 nm) lasers at high-power high-temperature operation (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3042-3044 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the long-term reliability measurement on uncoated Al-free InGaAsP/GaAs (λ=808 nm) lasers at high-power and high-temperature operation. No degradation in laser performance has been observed for over 30 000 h of lifetime testing in any of randomly selected several 100-μm-wide uncoated lasers operated at 60 °C with 1 W continuous wave output power. This is the first and the most conclusive evidence ever reported that directly shows the high long-term reliability of uncoated Al-free lasers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119431
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  • 25
    Electronic Resource
    Electronic Resource
    Cutting of a thin epitaxial iron film into low dimensional structures by dislocation engineering (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2195-2197 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The "Atomic saw" method, initially developed for semiconductor heterostructures, has been successfully used to fabricate low dimensional iron structures. Dislocations, generated by plastic deformation, are used to cut a 2 nm iron film, epitaxially grown onto a (001) MgO substrate, into one dimensional iron structures (called "stripes") or zero dimensional structures (called "boxes"). Atomic force microscopy observations of the created magnetic structures demonstrate the applicability of this simple method. A statistical analysis of these observations quantifies the distributions of the widths and the shifts of the created adjacent stripes and reveals that these two parameters can be controlled by the choice of the plastic strain. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119039
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  • 26
    Electronic Resource
    Electronic Resource
    High power asymmetrical InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3.4 μm (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1194-1196 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Midinfrared lasers with an asymmetrical InPAsSb/InAsSb/AlAsSb double heterostructure are reported. Using the asymmetrical double heterostructure, p- and n-cladding layers are separately optimized; high energy-gap AlAsSb (Eg(approximate)1.5 eV) for the p-type cladding layer to reduce the leakage current, and thus to increase To, and low energy-gap InPAsSb (Eg(approximate)0.5 eV) for the n-cladding layer to have low turn-on voltage. 100-μm-width broad-area lasers with 1000 μm cavity length exhibited peak output powers of 1.88 W in pulse and 350 mW in continuous wave modes per two facets at T=80 K with To of 54 K and turn-on voltage of 0.36 V. Maximum peak output powers up to 6.7 W were obtained from a laser bar of total aperture of 400 μm width and cavity length of 1000 μm, with a differential efficiency of 34% and far-field beam divergence narrower than 40° at 80 K. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123496
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  • 27
    Electronic Resource
    Electronic Resource
    Low-threshold and high power λ∼9.0 μm quantum cascade lasers operating at room temperature (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1741-1743 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a low threshold current density and high power for λ∼9 μmAlInAs/GaInAs quantum cascade lasers operating at room temperature. The threshold current density is 1.95 kA/cm2 at 300 K and 0.61 kA/cm2 at 80 K for 5 μs pulses at 200 Hz repetition rate. The peak output power is 700 mW at room temperature and 1.3 W at 80 K per two facets for cavity length is 3 mm with a stripe width of 20 μm. The characteristic temperature T0 is 185 °C. The slope efficiency is 450 and 800 mW/A at 300 and 80 K, respectively. In continuous wave operation, the output power is more than 150 mW at 80 K and 25 mW at 140 K. This high performance was achieved by improving the material growth and processing technology. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1310632
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  • 28
    Electronic Resource
    Electronic Resource
    High-performance quantum cascade lasers (λ∼11 μm) operating at high temperature (T ≥425 K) (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 416-418 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report record-low threshold current density and high output power for λ∼11 μm Al0.48In0.52As/Ga0.47In0.53As quantum cascade lasers operating up to 425 K. The threshold current density is 1.1, 3.83, and 7.08 kA/cm2 at 80, 300, and 425 K, respectively, for 5 μs pulses at a 200 Hz repetition rate. The cavity length is 3 mm with a stripe width of 20 μm. The maximum peak output power per facet is 1 W at 80 K, 0.5 W at 300 K, and more than 75 mW at 425 K. The characteristic temperature of these lasers is 174 K between 80 and 300 K and 218 K in the range of 300–425 K. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343848
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  • 29
    Electronic Resource
    Electronic Resource
    Cutaneous allergy to human (recombinant DNA) insulin (1998)
    Oxford, UK : Blackwell Publishing Ltd
    Allergy 53 (1998), S. 0 
    Details
    ISSN: 1398-9995
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1398-9995.1998.tb03786.x
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  • 30
    Electronic Resource
    Electronic Resource
    Can esmolol manage surgically-induced tachycardia? (1991)
    Oxford, UK : Blackwell Publishing Ltd
    Anaesthesia 46 (1991), S. 0 
    Details
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: A double-blind, randomised study was conducted to examine the efficacy of a single bolus dose of esmolol in treating surgically-induced tachycardia. Anaesthetic technique was identical in all patients, and consisted of premedication with midazolam and glycopyrronium, induction with thiopentone followed by suxamethonium, tracheal intubation, and maintenance with isoflurane 0.6% (end-tidal) and60% nitrous oxide in oxygen. Forty-eight patients developed a heart rate of greater than 95 beats/minute or 20% more than pre-induction values at an average time of 34 minutes after tracheal intubation and received placebo (15 patients), esmolol 50 mg (16 patients), or esmolol 100 mg (17 patients). Controlled intervention was instituted if heart rate or blood pressure was not adequate. Both 50 and 100 mg of esmolol resulted in lower heart rates compared to placebo (p 〈 0.05), with no difference between the two esmolol groups (p 〉 0.05). Patients who received placebo had more episodes of medical intervention than those given esmolol (p 〈 0.05). No adverse effects occurred in any patient.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2044.1991.tb09414.x
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