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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2559-2561 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work ballistic electron emission microscopy was used to probe on nanometer scale the local Schottky barrier height in metal-semiconductor (MS) contacts with an intentionally inhomogeneously prepared metallization. Schottky barrier maps of heterogeneous Au/Co/ GaAs67P33(100)-Schottky contacts show areas with different barrier heights which can be correlated to different metallizations (Au or Co) at the interface. The local Schottky barrier height of the Co patches depends on their lateral extension. This result can be explained by the theory of the potential pinch-off effect in inhomogeneous MS contacts. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 358-365 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work we investigated the relationship between the integral Schottky barrier height (SBH) obtained from conventional current–voltage (I–V) measurement and the distribution of the local SBH measured by ballistic electron emission microscopy (BEEM) on a nanometer scale length. For this purpose, we investigated inhomogeneous Au/Co/GaAs67P33-Schottky contacts. The samples were prepared by the deposition of a discontinuous Co film on the semiconductor followed by the deposition of a continuous Au film. This provided regions with local presence of one or the other metal (Au or Co) at the metal-semiconductor interface, resulting in mesoscopically extended SBH inhomogeneities. The local SBH distribution as well as the integral SBH depended on the preparation parameter of the Co layer, i.e., on the combination of the substrate temperature (300 or 500 K) and the nominal Co thickness (0, 0.25, 0.5, 0.8, 1.0 nm). For the different preparation parameters, statistical distributions of the local SBH were measured by BEEM. Treating these SBH distributions in terms of a parallel conduction model for the electron transport across the MS interface, we calculated for each preparation parameter an integral SBH and compared it with the measured integral SBH obtained from conventional I–V measurement. The calculated and measured integral SBH's were in very good agreement, demonstrating clearly the strong influence of the low SBH regions on the electron transport across the interface and therefore on the integral SBH. The SBH values for homogeneous Au/GaAs67P33- and Co/GaAs67P33-Schottky contacts, i.e., with only one sort of metal at the interface, were determined to be ΦSBAu=1180±10 meV and ΦSBCo=1030±10 meV. As with regard to the inhomogeneous Schottky contacts the fraction of area of the MS interface covered by Co increased, the local SBH distributions as well as the integral SBH's decreased gradually from the value of ΦSBAu to ΦSBCo. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4539-4543 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline Permalloy films were deposited onto silicon substrates by rf sputtering. Arrays of cylindrical dots with diameter d between 150 and 550 nm were patterned by optical holographic lithography. The dots were arranged on a square lattice with period p, ranging from 310 to 1030 nm. The height h of dots, given by the thickness of the permalloy films, ranged between 10 and 80 nm. The shape of the magnetization loops of the dot arrays depends strongly on the aspect ratio r=d/h. The in-plane saturation field is given by the intrinsic demagnetization field of single, isolated dots. The dipolar interaction between the dots is negligible. For cylinders with elliptical base plane, the magnetization loop depends on the field direction. The measured magnetization loops of the arrays are the superposition of the magnetization loops of the single dots without dipolar interaction. A model of magnetization reversal in applied fields is given. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 3831-3831 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetoresistance detectors are used to observe the magnetic state of microscopic parts of magnetized samples. The planar Hall effect can be used instead. Both effects can be applied to find out the logic "1'' or "0'' state of magnetic storage devices. They also can be used for a quantitative and sensitive measurement of magnetic fields as well as a magneto-elastic strain gauge. Soft magnetic permalloy films are appropriate for the field detection while amorphous Fe1−xBx films are suitable for the strain measurements. The sensor films have to show a uniaxial anisotropy. The strength of it determines the range of the detectable fields and strains. The sensitivity of the magnetoresistance emr=dΔU/dH=2( ρ⊥−ρ(parallel)) 1/db JH/HK2(V/Oe) depends linearly on the magnetic field H applied along the hard axis. l, d, b are the film length, thickness and width, respectively. The sensitivity of the planar Hall effect, which is given by epl=dUpl/dH =( ρ(parallel)−ρ⊥)s/db J(1/HK) is independent of the applied field along the hard axis as long as H(very-much-less-than)HK. s is the separation of the Hall contacts. Both sensitivities are reciprocal to the uniaxial anisotropy, HK as long as the applied field, H is smaller than HK. The theoretically expected sensitivity usually is decreased by domain splitting and the influence of the magnetization ripple. The smaller HK is (the larger the sensitivity is) the stronger is the influence of the ripple. It gives an upper limit of the interval in which external fields or applied strains can be quantitatively measured. Double layered films can prevent the domain splitting. The sensor theory including the ripple and experimental data will be given.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 165 (1961), S. 261-287 
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Zusammenfassung Es wird ein Verfahren angegeben, optimale Eisenaufdampfschichten herzustellen. Diese Schichten unterscheiden sich von allen unter anderen Bedingungen aufgedampften durch niedrigere Koerzitivkraft und eindeutige Reproduzierbarkeit der Dickenabhängigkeit der Koerzitivkraft. Die Hysteresekurve optimaler Schichten ist stets rechteckig. Die damit verbundene Anisotropie ist eine Folge des Restgas-einflusses. Die Schichten zeigen bis herab zu 30 Å Dicke die Magnetisierung des kompakten Materials.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 224 (1969), S. 156-171 
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The field at the center of a Lorentz-sphere due to all dipoles within this sphere has been calculated, assuming inhomogeneous orientations of the dipoles in the sphere, as one must expect in real crystals. This field has very often been neglected. The calculation shows the existence of a coupling field which stiffens the dipole directions against localized torques due to “distortion fields”. In the case of ferromagnetism, one can calculate the coupling field of an expanded Lorentz volume. This is analogous to the quantummechanical exchange field, which is due to the excess exchange energy. In many cases the above dipole coupling field is more important than the wellknown exchange field because the “dipole coupling constants” exceed the exchange constant by orders of magnitude.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 287-288 (Aug. 1998), p. 477-478 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 287-288 (Aug. 1998), p. 445-448 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 287-288 (Aug. 1998), p. 467-472 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 287-288 (Aug. 1998), p. 437-440 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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