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  • Electronic Resource  (3)
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  • Electronic Resource  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Ge segregation in SiGe/Si heterostructures and its dependence on deposition technique and growth atmosphere (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2531-2533 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ge segregation at SiGe/Si heterointerfaces has been studied for films deposited by atmospheric pressure chemical vapor deposition (APCVD), ultrahigh vacuum CVD (UHV/CVD) and molecular beam epitaxy (MBE). Profiles were taken by secondary-ion-mass-spectroscopy (SIMS) of samples grown with these techniques at the same growth temperatures and Ge concentrations. The MBE grown profiles are dominated by segregation of Ge into the Si top layer in the temperature range from 450 to 800 °C. SiGe/Si interfaces deposited by UHV/CVD at elevated temperatures are smeared, but at 515 °C and below the interfaces are abrupt within the resolution of the SIMS. Heterostructures grown by APCVD show abrupt interfaces and no indication of Ge segregation in the investigated temperature range from 600 to 800 °C. Surface passivation by hydrogen appears to be responsible for the suppression of the Ge segregation in CVD processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110449
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Fabrication of three-terminal resonant tunneling devices in silicon-based material (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1699-1701 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laterally gated three-terminal resonant tunneling devices have been fabricated from Si/Si1−xGex double-barrier structures grown by atmospheric pressure chemical vapor deposition. The gate is insulated from the submicrometer vertical channel by a low-temperature oxide and the entire fabrication scheme is compatible with current silicon technology. At T=77 K the resonant peak current can be modulated by 25% by applying a moderate gate voltage; at T=4.2 K, current modulation reaches 50%. We present calculations demonstrating that devices fabricated from optimized Si/Si1−xGex structures will pinch off fully at moderate gate voltages and operate at liquid nitrogen temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111838
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Selective growth of Si/SiGe resonant tunneling diodes by atmospheric pressure chemical vapor deposition (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2872-2874 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atmospheric pressure chemical vapor deposition is used to grow p-type Si/Si1−xGex double-barrier resonant tunneling structures on unstrained substrates, with a Si0.75Ge0.25 well clad by Si barriers. The current-voltage I(V) characteristics at T=77 and 4.2 K exhibit current peaks and negative differential resistance regions corresponding to resonant tunneling through well-resolved heavy- and light-hole subbands in the well. Device quality is comparable to Si/SiGe resonant tunneling structures grown by molecular beam epitaxy. The in situ substrate cleaning and selective growth capabilities of atmospheric pressure chemical vapor deposition are used for the first successful selective growth of resonant tunneling structures through an oxide mask. The resulting diodes exhibit good resonant tunneling characteristics. The selective growth process is promising for the fabrication of small vertical heterostructure devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108061
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    Paper (German National Licenses)
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