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  • 1
    Electronic Resource
    Electronic Resource
    HA-1A in septic patients with ARDS: Results from the pivotal trial (1994)
    Springer
    Intensive care medicine 20 (1994), S. 328-334 
    Details
    ISSN: 1432-1238
    Keywords: Adult respiratory distress syndrome ; Sepsis ; Anti-endotoxin monoclonal antibodies ; HA-1A
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Objective To evaluate the effects of HA-1A, a human monoclonal antiendotoxin antibody, in septic patients with ARDS. Design Substudy of a multicenter, double-blinded, placebo-controlled trial of HA-1A in septic patients. Patients 63 septic patients with ARDS at the time of study entry. Intervention A single intravenous injection of HA-1A (100 mg) or placebo. Results A quantitative radiographic score, the PaO2/FIO2 ratio and an index of the severity of ARDS did not show a significant difference between the treatment and placebo groups at 3, 5 and 7 days after treatment. The duration of endotracheal intubation did not differ between the two groups. 15 of 30 HA-1A treated patients (50%) and 23 of 33 placebo-treated patients (69.7%) died within 28 days. The daily mortality was always lower in the HA-1A group, but this difference was not statistically significant at 28 days. The 28-day survival curves for the two treatment groups adjusted by covariate analysis were not significantly different (p=0.07). Using logistic regression, a significant independent effect of HA-1A treatment was detected upon the early survival rate at 7 days (p=0.03) but not at 14 and 28 days. Conclusion A single injection of HA-1A in septic patients with ARDS did not reverse acute respiratory failure or improve long-term survival.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01720904
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  • 2
    Electronic Resource
    Electronic Resource
    Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3714-3725 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice mismatch in epitaxial layered heterostructures with small characteristic lengths induces large, spatially nonuniform strains. The components of the strain tensor have been shown experimentally to affect the electronic properties of semiconductor structures. Here, a technique is presented for calculating the influence of strain on electronic properties. First, the linear elastic strain in a quantum dot or wire is determined by a finite element calculation. A strain-induced potential field that shifts and couples the valence subbands in the structure is then determined from deformation potential theory. The time-independent Schrödinger equation, including the nonuniform strain-induced potential and a potential due to the heterostructure layers, is then solved, also by means of the finite element method. The solution consists of the wave functions and energies of states confined to the active region of the structure; these are the features which govern the electronic and transport properties of devices. As examples, two SixGe1−x submicron resonant tunneling devices, a quantum wire with two-dimensional confinement and a quantum dot with three-dimensional confinement, are analyzed. Experimentally measured resonant tunneling current peaks corresponding to the valence subbands in the material are modeled by generating densities of confined states in the structures. Size and composition-dependent strain effects are examined for both devices. In both the quantum dot and the quantum wire, the strain effects on the wave functions and energies of confined states are evident in the calculated densities of confined states in the structures, which are found to be consistent with experimentally measured tunneling current/voltage curves for resonant tunneling diodes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368549
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  • 3
    Electronic Resource
    Electronic Resource
    Cascaded resonant tunneling diode quantizer for analog-to-digital flash conversion (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 129-131 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose and model an application of cascaded resonant tunneling diodes to flash analog-to-digital conversion. We connect diodes of linearly increasing area in series, with separate contacts to interconnecting doped layers between the diodes. When a voltage is applied to the structure, the linearly changing diode size determines which of the diodes switch to the valley current, while the interconnecting contacts allow for a differential voltage measurement that accomplishes the signal quantization. The resulting flash quantizer has an estimated frequency operating limit in the gigahertz range. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1377622
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  • 4
    Electronic Resource
    Electronic Resource
    Strain relaxation in silicon-germanium microstructures observed by resonant tunneling spectroscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3921-3923 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the resonant tunneling current–voltage I(V) characteristics of strained p-Si/Si1−xGex double-barrier microstructures ranging from 1.0 to 0.1 μm in lateral extent. The bias spacing between resonant current peaks in the I(V) reflects the energy separation of the Si1−xGex quantum well subbands, which is partially determined by the strain. As the lateral size of the structures decreases, we observe consistent shifts in the I(V) peak spacing corresponding to strain energy relaxation of ∼30% in smaller structures. An additional I(V) fine structure is observed in the 0.1 μm device, consistent with lateral quantization due to nonuniform strain. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115318
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  • 5
    Electronic Resource
    Electronic Resource
    Resonant tunneling and intrinsic bistability in asymmetric double-barrier heterostructures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1408-1410 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurements of the current-voltage characteristics of an asymmetric GaAs/AlGaAs double-barrier resonant tunneling device. The structure was designed to increase the space charge in the well under forward bias and consequently enhance the electrostatic feedback that leads to intrinsic bistability. The magnetotunneling data demonstrate unambiguously that the observed bistability is the property of the device, rather than the biasing circuit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99956
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  • 6
    Electronic Resource
    Electronic Resource
    Preparation of (In,Mn)As/(Ga,Al)Sb magnetic semiconductor heterostructures and their ferromagnetic characteristics (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2929-2931 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of III-V-based magnetic semiconductor heterostructures, p-type (In,Mn)As/(Ga,Al)Sb, has been grown by molecular beam epitaxy. Studies on magnetotransport and magneto-optical properties show that perpendicular ferromagnetic order occurs in the heterostructures with thin (In,Mn)As layers. The origin is discussed in terms of both carrier- and strain-induced effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110276
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  • 7
    Electronic Resource
    Electronic Resource
    High field transport in an edge overgrown lateral superlattice (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 323-325 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have realized by cleaved edge overgrowth a two-dimensional electron gas system in a one-dimensional lateral superlattice consisting of 100 periods of 120 A(ring) GaAs/20 A(ring) AlGaAs. These devices exhibit nonlinear I–V, including negative differential resistance, at high electric fields. We demonstrate, by monitoring the changes in the two-dimensional electron density, that the nonlinear I–V is due to high field induced electron trapping. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113532
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  • 8
    Electronic Resource
    Electronic Resource
    Fabrication of three-terminal resonant tunneling devices in silicon-based material (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1699-1701 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laterally gated three-terminal resonant tunneling devices have been fabricated from Si/Si1−xGex double-barrier structures grown by atmospheric pressure chemical vapor deposition. The gate is insulated from the submicrometer vertical channel by a low-temperature oxide and the entire fabrication scheme is compatible with current silicon technology. At T=77 K the resonant peak current can be modulated by 25% by applying a moderate gate voltage; at T=4.2 K, current modulation reaches 50%. We present calculations demonstrating that devices fabricated from optimized Si/Si1−xGex structures will pinch off fully at moderate gate voltages and operate at liquid nitrogen temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111838
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  • 9
    Electronic Resource
    Electronic Resource
    Selective growth of Si/SiGe resonant tunneling diodes by atmospheric pressure chemical vapor deposition (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2872-2874 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atmospheric pressure chemical vapor deposition is used to grow p-type Si/Si1−xGex double-barrier resonant tunneling structures on unstrained substrates, with a Si0.75Ge0.25 well clad by Si barriers. The current-voltage I(V) characteristics at T=77 and 4.2 K exhibit current peaks and negative differential resistance regions corresponding to resonant tunneling through well-resolved heavy- and light-hole subbands in the well. Device quality is comparable to Si/SiGe resonant tunneling structures grown by molecular beam epitaxy. The in situ substrate cleaning and selective growth capabilities of atmospheric pressure chemical vapor deposition are used for the first successful selective growth of resonant tunneling structures through an oxide mask. The resulting diodes exhibit good resonant tunneling characteristics. The selective growth process is promising for the fabrication of small vertical heterostructure devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108061
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  • 10
    Electronic Resource
    Electronic Resource
    Subband dispersion of holes in AlAs/In0.10Ga0.90As/AlAs strained-layer quantum wells measured by resonant magnetotunneling (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 601-603 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetotunneling of holes through the double-barrier AlAs/In0.10Ga0.90As strained-layer structure is investigated with magnetic fields up to 23 T to determine the in-plane dispersion of the two-dimensional subbands in the In0.10Ga0.90As quantum well. Mass reversal, nonparabolicity, anticrossing, and anisotropy are observed. The lack of electronlike dispersion in the lowest-energy light-hole subband is attributed to the large biaxial compressional strain in the In0.10Ga0.90As, which suppresses the mixing of heavy and light-hole states even at finite in-plane wave vectors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106566
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