Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
73 (1993), S. 2294-2300
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have investigated the effect of the initial growth mode on the structural quality and dislocation configuration in epitaxial ZnSe/GaAs(100). We find that a three-dimensional initial growth mode strongly degrades the crystal quality and results in a high density of threading dislocations and short misfit dislocation segments. On the other hand a two-dimensional growth mode, achieved by a Zn exposure treatment of GaAs surfaces, results in few threading dislocations and long misfit dislocations. These differences are explained by postulation of new dislocation generation sites created by island coalescence.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.354079
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