Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 2437-2438
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have achieved a highly doped p-type ZnSe layer using a Li3N diffusion technique. The hole concentration of the p-type ZnSe layer, grown on a GaAs substrate by metalorganic vapor phase epitaxy, reached a level as high as 1017 cm−3. With the diffusion temperature of 470 °C, the resistivity of the layer is as low as 0.4 Ω cm, with hole concentration p(approximately-greater-than)9×1017 cm−3 and hole mobility μp=17 cm2/V s. We made an ohmic contact by using this p+-type ZnSe as a contact layer for p-ZnSe epilayers. © 1994 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112699
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