Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
61 (1992), S. 270-272
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Despite their large lattice mismatch (∼25%), epitaxial CaF2 films have been grown on single crystal Al(111) on Si(111) by low temperature molecular beam epitaxy. X-ray diffraction shows that the orientations of the CaF2 are the same as those of the Al films, whether the orientations of the Al are the same rotated 180° or with respect to the underlying Si substrate. Furthermore, our successful fabrication of an epitaxial Al/CaF2/Al/Si(111) structure suggests that Al can be a useful conductor material in three-dimensional device integration.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107966
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