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  • 2000-2004  (1)
  • 1960-1964  (1)
  • 2003  (1)
  • 1973
  • 1963  (1)
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  • 1
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract. We have measured resistivity as a function of temperature and pressure of Ti4O7 twinned crystals using different contact configurations. Pressures over 4 kbar depress the localization of bipolarons and allow the study of the electrical conduction of the bipolaronic phase down to low temperatures. For pressures P 〉 40 kbar the bipolaron formation transition is suppressed and a nearly pressure independent behavior is obtained for the resistivity. We observed an anisotropic conduction. When current is injected parallel to the principal axis, a metallic conduction with interacting carrier effects is predominant. A superconducting state was not obtained down to 1.2 K, although evidences of the proximity of a quantum critical point were noticed. While when current is injected non-parallel to the crystal’s principal axis, we obtained a logarithmic divergence of the resistivity at low temperatures. For this case, our results for the high pressure regime can be interpreted in the framework of interacting carriers (polarons or bipolarons) scattered by Two Level Systems.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Czechoslovak journal of physics 13 (1963), S. 182-187 
    ISSN: 1572-9486
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The author grew CdS single crystals by his own method which is described here in addition to other methods. The material was either prepared by the author or commercial luminescence-pure material was used. The amount of impurities in the commercial material was an order higher than in the author's own material. It was found that the physical properties (e.g. hole density) are worse in large single crystals than in crystals with a mosaic structure. For this reason it is thought that some of the properties are caused by stoichiometric deviations and other by defects in the crystal lattice. In this case impurification plays only a secondary role.
    Type of Medium: Electronic Resource
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