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  • 1990-1994  (15)
  • 1970-1974  (1)
  • 1960-1964
  • 1991  (15)
  • 1970  (1)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 220-225 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs has been grown on 9 and 18 A(ring) thicknesses of epitaxial Si which was grown on GaAs (100) substrates. The GaAs on Si interface was characterized by cross-sectional transmission electron microscopy. A 9 A(ring) thickness of Si on GaAs is pseudomorphic while 18 A(ring) of Si is relaxed. Antiphase domains (APDs) were observed to annihilate near the GaAs on Si interface. Annihilation ocurred within 100 A(ring) of the interface for the 9 A(ring) thickness of Si and around 1500 A(ring) for the 18-A(ring) Si case. From a detailed analysis of the APD shapes and sizes, we deduce that GaGa bonds are energetically favored in the {111} planes and that two separate APD annihilation mechanisms occur. The growth mode of epitaxial Si on GaAs was also studied by in situ high-energy electron diffraction.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2788-2790 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Despite the valence difference across the junction, it has been shown that ZnSe/GaAs epilayer/epilayer interface state densities can be reduced to values comparable to the (Al,Ga)As/GaAs interface. We have previously reported a transmission electron microscopy study indicating that ZnSe/GaAs structures exhibiting low interface state densities are associated with the formation of an interfacial layer of zinc-blende Ga2Se3. In this letter we describe a procedure whereby an interfacial layer can be deliberately introduced prior to nucleation of ZnSe. In situ x-ray photoelectron spectroscopy is used to study the nature of the bonding at the interfacial layer. A comparison of the Se 3d core level features from the ZnSe epilayer surface, a Se-reacted GaAs surface, and from a separately grown Ga2Se3 epilayer, clearly indicates the same Se bonding characteristic for the Se-reacted interfacial layer and the Ga2Se3 epilayer.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1988-1990 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdTe films were grown in both the (211) and (133) orientations on GaAs(211)B substrates by molecular beam epitaxy. The orientation of the epitaxy is dependent on the thermal cleaning process. Studies of these films included in situ reflected high-energy electron diffraction, x-ray double-crystal diffractometry, transmission electron microscopy, and photoluminescence, which revealed high quality for both CdTe growth orientations, and especially for the CdTe(133). The lattice of the CdTe(211) growth tilts 3° with respect to its GaAs(211) substrate about the CdTe[01¯1]//GaAs[01¯1] coincidence axis. The CdTe(133) has no tilt with respect to its substrate, and its coincidence axes are CdTe[01¯1]//GaAs[01¯1] and CdTe[61¯1¯]//GaAs[1¯11].
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1721-1726 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An extreme ultraviolet (EUV) radiation source for space simulation of plasma and other related phenomena in the laboratory has been developed. A total of forty-eight small EUV lamps are put together to give a radiation diameter of more than 30 cm. The intensity of this lamp at the hydrogen Lyman-alpha line is more than twenty five times stronger than sunlight at the same wavelength and at a distance of about 30 cm from the source. The source is capable of emitting EUV radiations from 110 nm to the longer wavelengths, either continuously or in pulses, and has been used to produce a plasma of 105 els/cm3 when the pressure of NO gas in the chamber was 10−4 Torr. Since this plasma is extremely calm and fairly Maxwellian, it can be used to study the electron collection mechanism of a probe in a collision dominant medium. The source was also utilized to study the interaction between vibrationally excited nitrogen molecules and thermal electrons.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallographic selectivity of molecular beam epitaxial growth of GaAs on mesas consisting of a (001) surface and (111)B facets is studied systematically. It was found that the growth rate on (111)B facets can be drastically reduced to ∼1/30 of the growth rate on (001) surface by the reduction of As flux on the (111)B facets. This enhanced selectivity results from the enhanced intersurface migration, and strongly indicates a feasibility of forming microheterostructures needed for the fabrication of edge quantum wires on (001)-(111)B mesas.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2055-2056 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 3 (1991), S. 2285-2290 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic islands play an important role in determining the stability and confinement properties of toroidal plasmas. The nonlinear growth of magnetic islands can lead to major disruptions in tokamaks. In stellarators, which do not have a continuous symmetry, the formation of magnetic islands can set equilibrium beta limits. In the first part of this paper, a novel method is proposed for reducing drastically the size of m=2, n=1 islands in tokamaks by introducing a beamlet of energetic ions just outside the q=2 surface via parallel neutral-beam injection. A simple physical picture is given of the nonlinear stability of a tearing mode in the Rutherford regime in the presence of energetic ions. This physical picture is supported by a kinetic calculation in the long mean-free-path regime in which the effect of bootstrap currents and resistive interchanges are retained. Estimates show that the energy of the beamlet required for the suppression is a small fraction of that used for Ohmic or beam-heating of the background plasma. In the second part of the paper, an equilibrium beta limit is obtained for stellarators by calculating the island widths induced by finite plasma pressure; the widths are then constrained by the criterion of island overlap. The theory is applied to the Heliotron-E device [Nakamura et al., Phys. Fluids B 2, 2528 (1990)]. It is shown that some aspects of the experimental observations on internal disruptions in Heliotron-E can be interpreted as signatures of the equilibrium beta limit.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Basic research in cardiology 86 (1991), S. 363-377 
    ISSN: 1435-1803
    Keywords: hypokinesis ; myocardial ischemia ; wall motion ; myocardial stiffness ; coronary blood flow
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Hypokinetic myocardial segment motion is observed in various pathophysiologic conditions. The aim of this study was to clarify the mechanisms involved in differences in segment motion of hypokinesis. Nineteen open-chest dogs were studied with regard to myocardial segment length, left ventricular pressure, and internal minor-axis diameter. Sequential instantaneous myocardial elastance [α(t) curve] was calculated under 4 different hypoxic conditions: complete coronary occlusion and reperfusion, partial coronary occlusion, coronary microembolization, and anoxic perfusion. The α(t) curve peaked at end-systole in the case of normal contraction; but it was almost totally flat when complete bulging occurred. The hypokinesis which occurred during development of the complete systolic bulgc immediately after complete coronary occlusion had an earlier α(t) peak curve than the hypokinesis resulting from partial coronary stenosis (209.5 ± 35.6 ms after end-diastole vs. 261.9 ± 18.2 ms; p 〈 0.02), microsphere injection into the coronary artery (243.2 ± 24.5 ms vs. 289.3 ± 15.4 ms; p 〈 0.05), or anoxic perfusion (213.4 ± 40.2 vs. 275.6 ± 28.3 ms; p 〈 0.05). The early a(t) peak resulted in a late-systolic bulge in segment length motion. In conclusion, hypokinetic segment motion differed depending on whether the coronary blood flow was present or not. A late-systolic bulge only developed immediately after complete coronary occlusion, and resulted from an abrupt decrease in myocardial stiffness during the cardiac cycle, which is closely related to the abrupt cessation of coronary blood flow.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 38-41 (Jan. 1991), p. 929-934 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 1432-0533
    Keywords: Aluminum ; Neurofibrillary change ; Microtubule-associated protein 2 ; Ubiquitin
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Experimental neurofibrillary change was produced in rabbit brains by daily subcutaneous aluminum tartrate injection for 40 days. The production of experimental neurofibrillary changes was confirmed by immunostaining with antibodies against neurofilament triplet proteins and the brain tissue was studied immunohistochemically with antibodies against microtubule-associated protein (MAP) 2 and ubiquitin. The hippocampal neurons of the chronically aluminum-intoxicated rabbit brain showed diminished staining of dendrites by anti-MAP2 antibody. The length of anti-MAP2-positive dendrites in hippocampus was significantly shorter than that of the control brain. In the cortex somata of a subset of pyramidal neurons were intensively stained by anti-MAP2 antibody, while the MAP2 immunoreactivity of distal dendrites was diminished. The immunostaining by anti-ubiquitin antibody revealed the positive staining of the neurons bearing experimental neurofibrillary changes in the lower brain stem nuclei. It is speculated that MAP2 dislocation and ubiquitination are accompanying phenomena of the production of experimental neurofibrillary changes in chronically aluminum-intoxicated rabbit brains.
    Type of Medium: Electronic Resource
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