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  • 2000-2004  (1)
  • 1975-1979
  • 1970-1974  (3)
  • 2003  (1)
  • 1971  (3)
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  • 2000-2004  (1)
  • 1975-1979
  • 1970-1974  (3)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Electrochemical methods for SO2 flue gas treatment (1971)
    Springer
    Journal of applied electrochemistry 1 (1971), S. 41-44 
    Details
    ISSN: 1572-8838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615745
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Dislocation etching of GaSe single crystals (1971)
    Springer
    Journal of materials science 6 (1971), S. 305-308 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Dislocation etching of GaSe single crystals was investigated by using a dilute chromic-sulphuric acid mixture, when conical etch pits were revealed on the (0001) surfaces. At the apices of spiral growth hills, bunches of spiral dislocations were revealed, proving that it is not a single screw dislocation of large Burgers vector, but a bunch of co-operating screw dislocations that were responsible for the spiral growth formations of large step-height. In the case of GaSe crystals, grown by vapour transport methods, dislocation densities of 102 to 106 cm−2 were found. The Bridgman crystals investigated were completely free from non-basal dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02403096
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Dislocation etching of GaSe single crystals (1971)
    Springer
    Journal of materials science 6 (1971), S. 305-308 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Dislocation etching of GaSe single crystals was investigated by using a dilute chromic-sulphuric acid mixture, when conical etch pits were revealed on the (0001) surfaces. At the apices of spiral growth hills, bunches of spiral dislocations were revealed, proving that it is not a single screw dislocation of large Burgers vector, but a bunch of co-operating screw dislocations that were responsible for the spiral growth formations of large step-height. In the case of GaSe crystals, grown by vapour transport methods, dislocation densities of 102 to 106 cm−2 were found. The Bridgman crystals investigated were completely free from non-basal dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00553586
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Electrical resistivity of the Ti $\mathsf{_4}$ O $\mathsf{_7}$ Magneli phase under high pressure (2003)
    Springer
    The European physical journal 34 (2003), S. 421-428 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract. We have measured resistivity as a function of temperature and pressure of Ti4O7 twinned crystals using different contact configurations. Pressures over 4 kbar depress the localization of bipolarons and allow the study of the electrical conduction of the bipolaronic phase down to low temperatures. For pressures P 〉 40 kbar the bipolaron formation transition is suppressed and a nearly pressure independent behavior is obtained for the resistivity. We observed an anisotropic conduction. When current is injected parallel to the principal axis, a metallic conduction with interacting carrier effects is predominant. A superconducting state was not obtained down to 1.2 K, although evidences of the proximity of a quantum critical point were noticed. While when current is injected non-parallel to the crystal’s principal axis, we obtained a logarithmic divergence of the resistivity at low temperatures. For this case, our results for the high pressure regime can be interpreted in the framework of interacting carriers (polarons or bipolarons) scattered by Two Level Systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1140/epjb/e2003-00240-2
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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