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EFFECT OF DEPLETION OF SERUM CALCIUM BY EGTA ON CANINE PANCREATIC SECRETION INDUCED BY DOPAMINE AND BY SECRETIN (1974)

Iwatsuki, K. ; Furuta, Y. ; Hashimoto, K.

Oxford, UK : Blackwell Publishing Ltd

Clinical and experimental pharmacology and physiology 1 (1974), S. 0

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ISSN: 1440-1681

Source: Blackwell Publishing Journal Backfiles 1879-2005

Topics: Medicine

Notes: SUMMARY 1. Pancreatic secretion has been monitored in the isolated, blood-perfused canine pancreas, and the effects of depletion of serum calcium by infusion of EGTA on the increases in secretion produced by intra-arterial injections of dopamine and secretin have been investigated.2. Under resting conditions in preparations in dogs fasted for 24 h, the mean rate of pancreatic secretion was 16.4 μ1/min (s. e. m. = 2, n= 12). The mean concentrations of protein, bicarbonate and chloride in the pancreatic juice were 53.8 mg/ml (s. e. m. = 4.5), 18.0 mmol/1 (s. e. m. = 1.1) and 122.5 mmol/1 (s. e. m. = 7.5), respectively. Infusion of EGTA had no effect on resting secretion.3. Secretion elicited by dopamine or secretin was diminished about 50% during the intra-arterial infusion of EGTA (10−2 mM/ml) in the perfusing blood. The protein concentration in the secretion was diminished to a similar extent. The concentrations of bicarbonate and chloride in the pancreatic juice was not modified by EGTA infusion.4. Concomitant infusion of an equimolar concentration of CaCl2 solution abolished the inhibitory effects of EGTA infusion on the secretory responses to dopamine or secretin.5. The results suggest that dopamine and secretin influence the exocrine secretions of the pancreas by actions on both acinar and ductular cells. Acinar cell secretion is more susceptible to depletion of serum calcium levels than is secretion from ductular cells.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1111/j.1440-1681.1974.tb00551.x

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Normally-Off 1400V/30A 4H-SiC DACFETand its Application to DC-DC Converter (2008)

Kitabatake, Makoto ; Tagome, M. ; Kazama, S. ; [et al.]

s.l. ; Stafa-Zurich, Switzerland

Materials science forum Vol. 600-603 (Sept. 2008), p. 913-918

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ISSN: 1662-9752

Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics

Notes: Large (3.6 x 3.6 mm2) chips of the SiC DACFET were fabricated and mounted inTO220 packages. The drain-source avalanche breakdown voltage without any gate bias(Vgs=0V) is measured to be 〉1400V. The SiC DACFET keeps the normally-off characteristicseven at 150°C. Ron and specific Ron of the SiC DACFET is measured to be 62mΩ and 6.7mΩcm2 at RT while those at 150°C change to 107 mΩ and 11.6 mΩcm2. The 400V / 3 kWDC-DC switched-mode power-conversion circuit with 100kHz switching was fabricated usingthe SiC DACFET and the SiC SBD. The turn-off switching loss reduces dramatically usingthe SiC-DACFET down to 77μJ/pulse which is less than 1/10 of that using the Si-IGBT