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Digitale Medien

Characterization of limited-diffusion-volume HgCdTe/CdTe photodiodes (1980)

Lanir, M. ; Shin, S. H.

Springer

Applied physics 22 (1980), S. 57-60

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Details

ISSN: 1432-0630

Schlagwort(e): 72.40+w ; 72.80 Ey ; 73.40 Lq

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract Thin epitaxial HgCdTe/CdTe photodiodes are shown to have lower dark current noise than similar thick devices. This is explained by the limited-diffusion-volume model which requires a thin diode and a low surface recombination rate. Electron beam induced current is used for characterizing minority electrons distribution; the characteristic interface recombinations(L/D) has been found to be equal to 0.05 at 80 and 210 K.R 0 A measurements give values consistent with this model.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00897933

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