ISSN:
0142-2421
Keywords:
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Physics
Notes:
Intense plasmon-loss features excited by kilovolt electron beams used in AES have been used to study the Si on Al2O3 interface. Variable electron beam energies provide a means of continuously varying the electron escape depth and subsequently removing this contribution from the plasmon-depth profiles. Parametrically varying the ion energy extrapolation of the interface width to zero ion energy yields an intrinsic interface width of 13±4 å, or about six Si atom layers.
Additional Material:
5 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/sia.740040406
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