ISSN:
1588-2780
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Energy, Environment Protection, Nuclear Power Engineering
Notes:
Abstract Hydrogen surface contamination and depth profiles can be measured by the resonant nuclear reactions1H(19F, αγ)16O and1H(15N, αγ)12C. The method was applied to study hydrogen-implanted silicon, amorphous silicon layers and silicon oxide films produced by anodic oxidation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF02209299
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