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  • 1985-1989  (3)
  • 1988  (2)
  • 1985  (1)
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  • 1985-1989  (3)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Improved instrument for medium energy electron diffraction and microscopy of surfaces (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 1215-1219 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The REMEDIE system for reflection electron microscopy and electron diffraction at intermediate energies (0.5–20 keV) has been rebuilt with an improved imaging resolution of better than 10 nm, a convenient and versatile system for observation diffraction patterns and provision for specimen preparation and treatment suitable for surface structural studies. The current capabilities of the instrument are illustrated by results obtained from cleaved and annealed silicon (111) surfaces with or without thin deposited silver and gold layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1137978
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Errors arising from numerical use of the Mott formula in electron image simulation (1988)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 44 (1988), S. 1-6 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The Mott formula relating the electron scattering factor to that for X-rays is inaccurate in its numerical form in the small-angle region. Effects of the inaccuracy on both kinematic and dynamical diffraction have been investigated. Some artifacts arising from the inaccuracy have been found in simulated electron microscopy images. A modified form for the Mott formula, which minimizes the error, is proposed. However, for any accurate and reliable calculation only those electron scattering factors derived directly from the atomic potential can be used.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108767387006858
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Electron microscopy of crystals with time-dependent perturbations (1988)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 44 (1988), S. 847-853 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The electron microscope image intensity of a thin crystal is described as a time average of the image of a crystal perturbed by time-dependent fluctuations corresponding to thermal motion of the atoms or low-energy electronic excitations. For very thin crystals the phase-object approximation indicates that images having atomic resolution may be obtained from the inelastically scattered electrons. It is shown that the use of suitable approximations allows estimates to be made of the contribution of the inelastically scattered electrons to the high-resolution images of thicker crystals. The resolution of images formed by inelastically scattered electrons is not affected by the non-localization of the inelastic scattering process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108767388004751
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    Paper (German National Licenses)
    Fulltext
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