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  • 2000-2004  (3)
  • 1985-1989  (3)
  • 2001  (3)
  • 1985  (3)
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  • 2000-2004  (3)
  • 1985-1989  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Texture transformations in reactive metal films deposited upon amorphous substrates (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2635-2640 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results that demonstrate how interfacial reactions between a metal film and substrate during deposition affect microstructural evolution. In particular, we investigate Ti films deposited on amorphous SiO2 using ultrahigh vacuum transmission electron microscopy. Ti films were deposited in situ at room temperature and were examined using Auger electron spectroscopy and transmission electron microscopy. An initial [hk0] preferred orientation developed in films up to 2.5 nm in thickness. Films between 2.5 and 5.0 nm developed a [001] preferred orientation that persisted in films up to 20.0 nm thick. These data, in conjunction with Auger electron spectra and dark-field microscopy, suggest that growth of Ti films on SiO2 is directly affected by reactions at the Ti/SiO2 interface and that this reaction is responsible for the observed change in preferred orientation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1337078
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Comparison of pulsed laser and furnace annealing of nitrogen-implanted silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 193-196 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied pulsed ruby laser and furnace annealing of high-dose (D〉1017 N/cm2) 50-keV nitrogen-implanted silicon. Using Rutherford backscattering and channeling, transmission electron microscopy, and infrared transmission spectroscopy, we have compared liquid and solid phase regrowth, diffusion, impurity segregation, and nitride formation. As has been previously reported, during furnace annealing at or above 1200 °C nitrogen redistributes and forms a polycrystalline silicon nitride (Si3N4) layer. In contrast, pulsed laser melting produces a buried amorphous layer containing silicon and nitrogen with only very small amounts of polycrystalline silicon nitride below a layer of polycrystalline silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335707
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Evolution of nanoscale texture in ultrathin TiN films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2223-2225 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the evolution of texture and grain morphology in fine-grained TiN thin films using cross correlation of dark-field images obtained using annular objective apertures with radii that correspond to different low index TiN reflections. This technique enables parallel analyses of the orientations of thousands of grains, with a spatial resolution of order 10 nm. Preferred grain orientations were determined for 40 and 100 nm thick TiN layers grown on SiO2 by magnetically unbalanced reactive magnetron sputter deposition. We find that no single orientation is dominant in the 40 nm films but that a 〈100〉 texture has developed by the time these films reach 100 nm in thickness. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1360235
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Deep submicron microcontact printing on planar and curved substrates utilizing focused ion beam fabricated printheads (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 981-983 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Focused ion beam (FIB) fabrication of nanostructured "printheads" is used to extend applications of microcontact printing. Planar and curved printheads are fabricated with feature sizes less than 100 nm over fields of view of order 1 mm2, and transferred to target substrates with spatial resolution of order 200 nm. Analysis of the mechanical and ion optical stabilities of the FIB demonstrates that several hours of printhead fabrication time are possible with nanoscale precision. The rapid prototyping capability of this approach and the large depth of focus in the FIB enable rapid nanoscale patterning of a wide range of surface geometries. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1348308
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Hybrid electronic properties between the molecular and solid state limits: Lead sulfide and silver halide crystallites (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 1406-1410 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Tiny single PbS crystals of ∼25 A(ring) diameter are synthesized and studied optically in low-temperature colloidal solutions. Electron microscopic examination shows a simple cubic rock salt structure with a lattice constant unchanged, within experimental error, from the bulk value. These crystallites lack the near infrared electronic absorption characteristic of bulk PbS. The small crystallite absorbance in the visible rises more steeply than does the bulk absorbance. These results reflect electron and hole localization if one considers the variation in effective mass across the band structure. A simple discussion of localization anywhere in the Brillouin zone is given. For the first time, crystallite syntheses are carried out in solvent mixtures that form transparent glasses upon cooling. The PbS spectra are independent of temperature (at current experimental resolution) down to 130 K, in contrast to earlier results for quantum size exciton peaks in ∼20 A(ring) ZnS crystallites. Previously published observations of size dependence in the excited state electronic properties of AgI and AgBr are explained as consequences of electron and hole localization in the small crystallites. AgBr appears to be the first indirect gap semiconductor to be examined in the regime where bulk properties are not fully formed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.449407
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Excited electronic states and optical spectra of ZnS and CdS crystallites in the ≈15 to 50 A(ring) size range: Evolution from molecular to bulk semiconducting properties (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 82 (1985), S. 552-559 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Very small ZnS and CdS crystallites are made and stabilized in aqueous and methanolic media without organic surfactants. Low temperature (−77 °C) synthesis in methanol produces the smallest crystallites, (approximate)30 A(ring) diameter cubic CdS and 〈20 A(ring) diameter cubic ZnS. The crystallites are characterized by transmission electron microscopy and in situ optical spectroscopy (λ(approximately-greater-than)200 nm). The crystallites are too small to exhibit bulk band gaps in their optical spectra. In the band gap region, the small crystallites show a higher energy absorption threshold with a resolved spectral feature (quantum size exciton peak), not present in the spectra of larger crystals. The far ultraviolet spectra are unaffected by size at present resolution. These results can be understood in terms of the crystallite molecular orbitals, and an elementary confined electron and hole model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.448727
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    Paper (German National Licenses)
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