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  • 1985-1989  (3)
  • 1975-1979
  • 1970-1974
  • 1985  (3)
Material
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  • 1985-1989  (3)
  • 1975-1979
  • 1970-1974
Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 613-614 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of Al in polycrystalline ion-implanted α-Ti has been studied in the temperature range 600–850 °C using ion-beam techniques. Diffusion couples were created by ion implantation. The time-dependent concentration profiles were monitored by the use of the nuclear resonance broadening technique through the 27Al(p,γ) 28Si reaction. The effect of the implantation energy and implanted dose on the diffusivity of Al has been investigated. The value of 1.62±0.11 eV for the activation energy and (7.4±9.8)×10−7 cm2/s for the frequency factor was obtained. The present result is discussed in the framework of the Ti diffusion barrier used in semiconductors.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1423-1425 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sixteen metals implanted to saturation with 300-keV N2+ ions have been studied using nuclear resonance broadening and Rutherford backscattering techniques to profile the implanted concentration. Blisters due to the implanted nitrogen were observed in Mg, Al, Ti, V, Cr, Nb, Mo, Ta, W, and AISI 304 steel but not in Cu, Zr, Ag, Hf, and Au. The nominal saturation concentration at maximum varied from 50 to 60 at. % for all cases except for Cu, Ag, and Au, where it was 20 at. %. The surface hardness was generally increased by a factor between 1.2 and 2.3. However, no increase was observed for Mo, Ag, and Au. The mononitride formation in Ti, Zr, and Hf was verified by x-ray diffraction. The formation of blisters and diffusion in the preparation of nitrides is discussed.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1588-2780
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract In order to extend the energy range of the systematic investigation on relative thick target yields performed by ANTTILA et al2 for 1≤Ep≤2.4 MeV bombarding energies, gamma spectra and yield data are presented for elements Z=3–9, 11–17, 19–21 in the energy range 2.4≤Ep≤4.2 MeV and the results are discussed from the point of view of PIGE analysis.
    Type of Medium: Electronic Resource
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