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  • 1
    Electronic Resource
    Electronic Resource
    Redistribution of implanted H in annealings of n-type GaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2334-2336 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depth profiles of 60- and 100-keV protons implanted at room temperature to fluences of 1016 and 1017 H+ ions/cm2 in Si-doped n-type GaAs have been obtained using ion beam techniques. The profiles of H have been measured as a function of annealing temperature up to 820 K. The redistribution of implanted H is observed to depend on the migration of implantation-induced defects. The migration of H-atom-defect complexes is approximated by an Arrhenius process with an activation energy of 2.16±0.15 eV and a preexponential factor of 2×105 cm2/s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341664
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  • 2
    Electronic Resource
    Electronic Resource
    Heavy ion elastic scattering cross sections for energies near the Coulomb barrier (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 642-644 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Elastic scattering of 12C, 14N, and 16O ions by aluminum, silicon, and titanium has been investigated below 34 MeV at a backscattering angle of 170°. The excitation functions at energies near the Coulomb barrier and non-Rutherford threshold energies above which the Rutherford cross sections become invalid, are presented for direct scattering and the kinematically reversed reactions. Sharply decreasing cross sections above the threshold energies, but no broad resonance-like structures, were observed. The non-Rutherford threshold energies are clearly higher than the values predicted by a theoretical model based on nuclear perturbation and optical model calculations recently presented in the literature. A new unpublished version of the model gives better agreement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355805
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  • 3
    Electronic Resource
    Electronic Resource
    Angular distributions of 12C, 14N, and 16O ion elastic scattering by sulfur near the Coulomb barrier and the high-energy limits of heavy-ion Rutherford scattering (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1762-1765 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Elastic scattering of 12C, 14N, and 16O ions by sulfur has been investigated near the non-Rutherford energy threshold below 31 MeV. Angular distributions in the range 72°–170° have been measured. Decreasing elastic scattering cross sections with increasing angle above a threshold energy and smooth oscillations were observed. As a function of energy, the cross sections fall off rapidly above the threshold energy, rendering heavy-ion backscattering spectrometry practically useless. A classical semiempirical model is introduced for predicting the angular and target dependence of the high-energy limit for 12C, 14N, and 16O ion Rutherford backscattering spectrometry. The present energy thresholds are reproduced by the model within experimental accuracy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358871
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  • 4
    Electronic Resource
    Electronic Resource
    Non-Rutherford cross sections in heavy ion elastic recoil spectrometry: 40–70 MeV 32S ions on carbon, nitrogen, and oxygen (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3273-3277 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Elastic scattering cross sections for 12C, 14N, and 16O recoils by 32S ion bombardment below 70 MeV at recoil angles of 20°, 25°, 30°, and 40° have been investigated. The experiments are performed by measuring the elastic scattering yields near the Coulomb barrier energies for the kinematically reversed 32S (12C, 12C) 32S, 32S(14N, 14N)32S and 32S(16O, 16O)32S reactions. At a threshold energy, above which the Rutherford model becomes invalid, the cross sections are found to fall off rapidly. No prominent resonancelike structures are observed in the present energy region. The non-Rutherford threshold energies, and the elastic recoil excitation functions are presented. Based on fits to the present heavy ion recoil data and earlier heavy ion scattering data from the literature, a classical semiempirical formula for predicting the projectile threshold energies for 12C, 14N, and 16O recoils is introduced. Above the threshold, the rapid decrease of the cross sections renders useful elastic recoil detection analysis impossible. These energies thus constitute a practical high energy limit for elastic recoil spectrometry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356134
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  • 5
    Electronic Resource
    Electronic Resource
    Defect formation and annealing behavior of InP implanted by low-energy 15N ions (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 738-746 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect formation has been studied in nitrogen-implanted III–V compound semiconductor material InP. Sulphur-doped n-type (100) InP samples were implanted at room temperature with 30 keV 15N+ion doses of 1014–1016 N atoms cm−2. The implanted samples were subjected to isochronal vacuum annealing in the temperature range of 450–650 °C. The annealing behavior of nitrogen atom distributions, implantation-induced displacements of indium atoms, vacancy-type defects, and damage annealing were studied by nuclear resonance broadening, secondary ion mass spectrometry, ion backscattering and channeling, and slow positron annihilation techniques. Doses above 1015 N atoms cm−2 were found to produce amorphous layers extending from the surface to depths beyond the deposited energy distribution, up to 110 nm. The depth of an amorphous layer was observed to depend on the implantation dose. Temperature and dose-dependent epitaxial regrowth starting from the amorphous-crystalline interface was observed at 575 °C. The damage and vacancy concentration distributions were correlated with the implanted nitrogen distribution in the case of the highest implantation dose at 1016 N atoms cm−2; disorder annealing and loss of nitrogen behave in a like manner with increasing temperature. For the lower doses, however, almost no redistribution or loss of nitrogen arose despite structural damage and vacancy annealing. Interpretation of the positron data allowed an identification of two types of vacancies. The type of the vacancy defects was found to depend on the implantation dose and annealing temperature; monovacancies were formed in the In sublattice at the low implantation doses, while the highest dose produced divacancies. The annealing tended to convert the monovacancies into divacancies, which were recovered at high temperatures depending on the implantation dose. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366746
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  • 6
    Electronic Resource
    Electronic Resource
    Electron detection by resistive charge division based position sensitive detectors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 4358-4361 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The use of resistive charge division based solid-state detectors for position sensing of electrons has been studied. The operational conditions having importance for device performance are considered for one- and two-dimensional detectors manufactured by SiTek®. The parameter of main interest has been position resolution. Good linearity with a spatial resolution of 0.2 mm is obtained under optimum conditions. The advantages and limitations of the present approach and alternative techniques that could be considered for individual electron detection are discussed. A possible application of the detector is foreseen in its use for lattice location studies of impurity atoms by emission channeling. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1412859
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  • 7
    Electronic Resource
    Electronic Resource
    Diffusion of Au in ZnSe and its dependence on crystal quality (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 799-802 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of gold in zinc selenide has been studied by using a 12C and 4He ion backscattering technique. The samples were thin films grown by molecular beam epitaxy on bulk GaAs (100) substrates and on GaAs (100) epitaxial layers followed by evaporation of gold and annealing in the temperature range 400–800 °C. The surface properties of the samples were studied with scanning electron microscopy and atomic force microscopy. The crystal quality of the samples was studied with 4He ion channeling. The gold diffusion was found to depend significantly on the crystal quality of the ZnSe. An empirical model for calculating the diffusion coefficient for different crystal quality ZnSe is presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369162
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  • 8
    Electronic Resource
    Electronic Resource
    Solute-defect interactions in a metastable Pb–Ni alloy formed by high-fluence ion implantation (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 895-901 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Implantation of 240 keV Pb+ ions into a Ni (110) single crystal to a fluence of 1016 cm−2 at room temperature and 470 K, respectively, resulted in the formation of a metastable supersaturated Pb–Ni solid solution with a maximum lead concentration of 2.4 at. %. Rutherford backscattering/channeling analysis and transmission electron microscopy have shown that in the as-implanted state most of the Pb atoms were distributed on substitutional lattice sites in the host matrix while a small fraction of Pb was confined within nanoscale precipitates. Most of the precipitates, with sizes ranging from 2 to 15 nm, were single crystalline although bi-, tri-, and tetracrystals were occasionally observed. Upon heating, decomposition of the metastable alloy was observed, with strong outdiffusion of a large fraction of Pb to the surface. By means of angular scan channeling analysis, the lattice location of the implanted Pb atoms was followed directly during in situ isochronal annealing at different temperatures up to 860 K. Thermally activated formation of Pb atom–vacancy complexes was found to cause originally substitutional Pb atoms to change to different types of lattice site occupation. The regular and distorted substitutional, octahedral interstitial, and random locations of the Pb atoms appeared to be strongly correlated with the temperature of the annealing. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1489090
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  • 9
    Electronic Resource
    Electronic Resource
    Diffusion of aluminum in ion-implanted α-Ti (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 613-614 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of Al in polycrystalline ion-implanted α-Ti has been studied in the temperature range 600–850 °C using ion-beam techniques. Diffusion couples were created by ion implantation. The time-dependent concentration profiles were monitored by the use of the nuclear resonance broadening technique through the 27Al(p,γ) 28Si reaction. The effect of the implantation energy and implanted dose on the diffusivity of Al has been investigated. The value of 1.62±0.11 eV for the activation energy and (7.4±9.8)×10−7 cm2/s for the frequency factor was obtained. The present result is discussed in the framework of the Ti diffusion barrier used in semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334747
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  • 10
    Electronic Resource
    Electronic Resource
    Lattice location of erbium in high-fluence implanted silicon–germanium: Backscattering/channeling study (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2154-2155 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality crystalline Si0.75Ge0.25 alloy crystals were implanted with 70 keV Er+ ions at 550 °C to a fluence of 1019 m−2. In situ Rutherford backscattering/channeling spectrometry with a 500 keV He2+ beam revealed Er atoms located on regular lattice sites of the host matrix. Angular scans taken around the 〈100〉, 〈110〉, and 〈111〉 crystallographic axes showed that a considerable fraction of Er atoms occupy tetrahedral interstitial sites. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1315345
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