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  • 1990-1994
  • 1985-1989  (2)
  • 1986  (2)
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Years
  • 1990-1994
  • 1985-1989  (2)
Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 611-618 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed study of the optical properties of sputtered hydrogenated amorphous silicon films with varying hydrogen concentration is presented here. The energy dependence of the absorption coefficient is looked into, in detail, from a point of view of understanding the well known Tauc rule and the alternate relations being proposed in recent years. Spectroscopic and band-structural models like Wemple–Didomenico and Penn are then utilized to analyze the optical parameters near the band-gap region of the wavelength spectra. Extensive comparisons of our results are made with those of sputtered a-Si:H films of other workers, glow discharge prepared a-Si:H, chemically vapor deposited and evaporated a-Si, and also crystalline silicon. The similarities in the variation of the optical properties of a-Si:H with increasing hydrogen concentration (or decreasing measurement temperature) to that of crystalline silicon with decreasing measurement temperature lead us to interesting conclusions. Thus, it seems that decreasing disorder (topological or thermal) in a-Si:H is equivalent to decreasing thermal disorder in c-Si, at least as far as the disorder-optical property relationships are concerned.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 8 (1986), S. 447-463 
    ISSN: 0392-6737
    Keywords: Photoconduction and photovoltaic effects ; photodielectric effects
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto In questo lavoro si presenta un modello per la determinazione e l'ottimizzazione dei parametri fondamentali atti a definire la qualità delle celle solari amorfe, specificando le proprietà ottiche, elettriche e di ricombinazione. Esso può essere applicato a qualunque sistema di celle solari amorfe. Sono fornite le espressioni teoriche ed è descritto un metodo iterativo per il calcolo numerico della densità di corrente di alcuni tipi di celle. Sono anche presentati i risultati ottenuti da calcoli eseguiti col computer e basati su questo modello.
    Notes: Summary A model for determination and optimization of the fundamental parameters defining the quality of amorphous solar cells in which optical, electrical and recombination properties are specified is developed. It can be applied to any amorphous solar-cell systems. This paper gives theoretical expressions and describes an iterative method of numerical calculation for the current density of different cells. Results of computer calculations based on this model are presented.
    Type of Medium: Electronic Resource
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