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  • 1
    Electronic Resource
    Electronic Resource
    Elektrochemische Darstellung von Cyclopolyphosphanen - Elektrochemische Untersuchung von Phenyldichlorphosphan, o-, m-, p-Bromphenyl-dichlorphosphan sowie tert.-Butyldichlorphosphan (1986)
    Weinheim : Wiley-Blackwell
    Zeitschrift für anorganische Chemie 542 (1986), S. 167-174 
    Details
    ISSN: 0044-2313
    Keywords: Chemistry ; Inorganic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: Synthesis of Different Cyclopolyphosphanes by Cathodic Reduction, Electrochemical Investigation of Phenyldichlorophosphane, o-, m-, p-Bromophenyldichlorophosphane and tert.-ButyldichlorophosphaneThe electrochemical properties of selected dichlorophosphanes R-PCl2 (R = C6H5, o-BrC6H4, m-BrC6H4, p-BrC6H4, t-Bu) have been investigated by the Differential-Pulse-Polarography (DPP) and by cyclic voltammetry. On the basis of the obtained results an electrolysis (cathodic reduction) has been carried out with these substances in a 1,2-dichlorethane/0.1 M tetrabutyl-ammonium tetrafluoroborate solution with a mercury pool. The following cyclopolyphosphanes have been prepared, isolated, and characterized: (C6H5P)5,(4); (o-BrC6H4P)4; (m-BrC6H4P)5,(4,6); (p-BrC6H4P)5,(4); (t-BuP)4.
    Notes: Mit Hilfe von Differential-Puls-Polarographie (DPP) und Cyclovoltammetrie wurde das elektrochemische Verhalten ausgewählter Dichlorphosphan-Verbindungen R-PCl2 (R = C6H5, o-BrC6H4, m-BrC6H4, p-BrC6H4, t-Bu) untersucht. Auf der Grundlage der erhaltenen Werte wurden diese Substanzen in einer 1,2-Dichlorethan/0,1 M Tetrabutylammonium-tetrafluoroborat-Lösung kathodisch an einem Quecksilbersee elektrolysiert. Folgende Cyclopolyphosphane wurden dabei hergestellt, isoliert und charakterisiert: (C6H5P)5,(4); (o-BrC6H4P)4; (m-BrC6H4P)5,(4,6); (p-BrC6H4P)5,(4); (t-BuP)4.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/zaac.19865421122
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  • 2
    Electronic Resource
    Electronic Resource
    Flash vacuum thermolysis of 5,6,8,9-tetrahydro-4'-methylenespiro[7H-benzocycloheptene-7,1'-cyclohexa-2',5'-diene]. The intermediate formation of [3,2]orthoparacyclophane (1986)
    s.l. : American Chemical Society
    The @journal of organic chemistry 51 (1986), S. 2162-2168 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00362a002
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  • 3
    Electronic Resource
    Electronic Resource
    Plasma-enhanced growth and composition of silicon oxynitride films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2536-2542 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon oxynitride films with varying oxygen/nitrogen ratio were grown from SiH4, N2O, and NH3 by means of a plasma-enchanced chemical vapor deposition process. The elemental composition of the deposited films was measured by a variety of high-energy ion beam techniques. To determine the chemical structure we used Fourier transform infrared absorption spectroscopy and electron-spin resonance. Ellipsometric data and values for mechanical stress are also reported. We show that the entire range of compositions from silicon oxide to silicon nitride can be covered by applying two different processes and by adjusting the N2O/NH3 gas flow ratio of the respective processes. It is suggested that the N2O/SiH4 gas flow ratio is the major deposition characterization parameter, which also controls the chemical structure as far as the hydrogen bonding configuration is concerned. We found that the films contain significant amounts of excess silicon and that the mechanical stress in the oxynitrides is lower than in plasma nitride. The electron-spin density is low (∼1017/cm3) in all samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337117
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  • 4
    Electronic Resource
    Electronic Resource
    Particle number and pressure determination in high-pressure lamps (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1263-1268 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental setup is described which makes it possible to determine the particle number per unit length and the pressure in high-pressure mercury lamps. For this purpose the absorption of the frequency-doubled 514.5-nm line of an Ar+ laser by the mercury ground state is used. The method has been applied to measure the spatial variation of the particle number along the axial direction of a high-pressure arc and also to determine the time-dependent particle number during the warm-up and cool-down phases of a lamp. Furthermore the frequency dependence of the pressure fluctuations in a high-pressure lamp during an ac cycle has been measured for sinusoidal as well as pulsed supply voltage. The results are in agreement with calculations from a numerical model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337348
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  • 5
    Electronic Resource
    Electronic Resource
    Hydrogenation during thermal nitridation of silicon dioxide (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2765-2772 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of nitrogen and hydrogen during nitridation of SiO2 was studied over the temperature range of 800–1000 °C and for ammonia pressures of 1, 5, and 10 atm. The nitrogen content of the nitrided films was determined with Rutherford-backscattering spectrometry and elastic-recoil detection. Nitrogen in-depth profiles were obtained applying Auger analysis combined with ion sputtering. Hydrogen profiles in the films were measured using nuclear-reaction analysis. Both the nitrogen and hydrogen incorporation were found to increase with temperature in this range. A higher ammonia pressure primarily increases nitridation of the bulk of the oxide films. Depending on the nitridation conditions, up to 10 at.% of hydrogen may be incorporated. As distinct from the nitrogen profiles, the hydrogen in-depth profiles are essentially flat. The concentration of hydrogen in the films, however, was always found to be smaller than that of nitrogen: measured H/N ratios varied between 0.25 and 0.85, the smaller values being obtained for the thinner oxides and higher nitridation temperatures. The model previously postulated to explain the nitrogen incorporation during atmospheric nitridation of SiO2 proves to be valid at higher pressures as well. By considering the role of OH as a reaction product of the nitridation process, the hydrogen results can be accommodated within the same concept. The model predicts a low H/N-incorporation ratio for a thin surface and interface layer and a substantially larger ratio for the bulk of the film. If this prediction is correct, which seems to be indicated by the etch-rate behavior of the nitrided oxides, then this would have considerable importance for the electrical properties of this material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336985
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  • 6
    Electronic Resource
    Electronic Resource
    Doping dependence of the Schottky-barrier height of Ti-Pt contacts to n-gallium arsenide (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1832-1833 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The barrier height and ideality factor of Ti–Pt contacts on n-type GaAs have been measured in the doping range Nd =3.3×1016 to 3×1018 cm−3. The flat-band barrier height, determined from capacitance-voltage measurements, is found to be independent of Nd whereas the effective barrier height for current transport, defined by the relation for thermionic emission, decreases rapidly at Nd 〉1×1018 cm−3. The results agree quite well with thermionic field-emission theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337226
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  • 7
    Electronic Resource
    Electronic Resource
    Annealing of plasma silicon oxynitride films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2543-2547 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The anneal behavior of plasma-enhanced chemical vapor deposited silicon oxynitride films has been studied using Fourier transform infrared absorption spectroscopy, nuclear reaction analysis, and electron-spin resonance. The anneal temperature range was 500–1000 °C. It is observed that the oxynitrides which contain only N–H bonds are thermally stable in the temperature range under study. The layers which also contain Si–H bonds are considerably less thermally stable. Abundant hydrogen effusion from these layers is observed at temperatures as low as 600 °C, accompanied by cracking and shrinkage of the films. It is suggested that the coexistence of both Si–H and N–H bonds offers the possibility for cross linking and that consequently the decomposition temperature of both types of bonds is lowered. Evidence for the occurrence of cross linking is found in the infrared difference spectra. Consistently, the silicon unpaired electron density does not increase upon annealing. The Si–H and N–H bands effectively shift towards higher wave numbers upon annealing at higher temperatures. This is ascribed to the inhomogeneity in bond strength, which in turn is related to a variation in electronegativity of the surrounding groups.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337118
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  • 8
    Electronic Resource
    Electronic Resource
    Hydrogen in low-pressure chemical-vapor-deposited silicon (oxy)nitride films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 447-453 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon (oxy)nitride films (SiOxNy) have been deposited onto silicon by low-pressure chemical vapor deposition using SiH2Cl2, N2O and NH3 or ND3. Nuclear reaction analysis, elastic recoil detection, and Rutherford backscattering spectrometry have been used to determine the elemental composition of the films with emphasis on the hydrogen and deuterium content. In the as-deposited, NH3-grown films the bulk hydrogen concentration is about 3 at. % for an oxygen/nitrogen atomic ratio (O/N) smaller than 0.4, for O/N〉0.4 it is lower. In 900 and 1000 °C vacuum annealed films the bulk hydrogen concentration as a function of O/N goes through a maximum at O/N≈0.4. By comparing this observation with the D content in ND3-grown films as a function of O/N, a model is deduced which explains this behavior. This model involves an oxygen induced increase of the electronegativity of the atoms to which hydrogen/deuterium is bound. Annealing at 1000 °C in a H2/N2 gas mixture of NH3-grown films results in bulk hydrogen concentrations ranging between those measured after the 1000 °C vacuum anneal and the values for the as-deposited state. The chlorine concentration increases with increasing oxygen content in the oxynitride films from 0.04 at. % at O/N=0 to 0.65 at. % at O/N=∞. Implications of the data and the proposed model for the electrical performance of the silicon (oxy)nitrides are briefly discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336651
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  • 9
    Electronic Resource
    Electronic Resource
    Molecular Genetics of Transosable Elements in Plants (1986)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Genetics 20 (1986), S. 175-200 
    Details
    ISSN: 0066-4197
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ge.20.120186.001135
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  • 10
    Electronic Resource
    Electronic Resource
    NPL superconducting linac control system (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 784-786 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The control system for the Nuclear Physics Lab (NPL) linac is based on a Microvax II host computer connected in a star network with nine satellite computers. These satellites use single-board versions of DEC's PDP 11 processor. The operator's console uses high-performance graphics and touch-screen technology to display the current linac status and as the means for interactively controlling the operation of the accelerator.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138865
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