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  • 1985-1989  (2)
  • 1987  (2)
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  • 1985-1989  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1462-1464 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of ion-implanted thin films of the superconductor YBa2Cu3Ox has been investigated by transmission electron microscopy. The superconducting properties of the films were dominated by large pancake-shaped grains of YBa2Cu3Ox with their c axis perpendicular to the substrate. Other grains of YBa2Cu3Ox whose c axis was parallel to the substrate formed spherulites. Irradiation with 500 keV O+ ions caused amorphous zones to appear on the grain boundaries between the pancake grains, which initially were free of amorphous or second phases. At higher dose a continuous amorphous layer 150 A(ring) thick was formed. However, the interior of the grains showed no irradiation-induced microstructural features until they became amorphous at a dose of 3×1014 ions/cm2. The appearance of the amorphous layer on the grain boundaries at low doses accounts for the reduction in the superconducting transition temperature observed in these films.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2203-2211 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The preparation of TaSi2-WSi2 alloys from the reaction of Si with Ta-W films allows one to explore the constitution diagram of the TaSi2-WSi2 pseudobinary system. The structure of the alloys has been investigated by means of Rutherford backscattering, x-ray diffraction, and transmission electron microscopy. The "equilibrium'' phase diagrams for the system TaSi2-WSi2 and for TiSi2-WSi2 are compared in light of simple ideas of alloy theory based on the consideration of the electron to atom ratios. The resistivity of the alloys is analyzed in terms of what has been established about the transport properties of the disilicides and of possible contributions of structural defects, mostly stacking faults, to scattering processes.
    Type of Medium: Electronic Resource
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