ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The incorporation and electrical activation of As, implanted in situ during molecular-beam epitaxial growth of epilayers on Si(100), is reported. Parameters varied included growth temperature (460–700 °C), implantation energy (500–1000 eV), and concentration (1017→〉1020/cm3 ). In general, the material was excellent with 100% activation and bulk mobilities for concentrations up to the equilibrium solid solubility limit and carrier densities in excess of five times this limit in highly doped samples.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.341350
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