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  • 1995-1999  (14)
  • 1985-1989  (6)
  • 1955-1959
  • 1997  (4)
  • 1996  (10)
  • 1989  (6)
  • 1
    Electronic Resource
    Electronic Resource
    Localization and hopping of magnetoelastic waves in highly magnetostrictive strings with random chain structures (abstract) : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5692-5692 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Analogous to the localization of the wave function of an electron in a random potential (Anderson localization), in the macroscopic system of magnetoelastic waves (MEWs) propagating in a highly magnetostrictive string exhibiting the giant ΔE effect, the piling-up of MEWs into a wave-packet in a restricted small region of the string is expected. This wave-packet is subject to hopping in a discontinuous wave by applying a magnetic field due to the change in the local elastic states caused by the ΔE effect. From this expectation, a theoretical analysis was performed focusing on the derivation of localization conditions of MEWs. The analysis was carried out using a one-dimensional string model having high magnetostriction. The string is assumed to be composed of random chains with (1) alloy-type disorder (random weights of masses with equal spacings) and (2) liquid-type disorder (random spacings of masses with equal weights). For the elastic and magnetoelastic constants of the string, the value of Fe78Si10B12 amorphous wire (Unitika) were used in the calculations. No substantial changes in the localization states were not recognized in both modes. The analysis revealed that, when the change of the apparent Young's modulus with magnetic field ΔE is 28%, the localized MEWs are subject to hopping conserving their wave identities (eigenfrequencies and eigenstates). This result in considered to originate from the changes in the disorder conditions to support the localization of MEWs. To confirm the above theoretical prediction experimentally, MEW properties have been measured by using Fe78Si10B12 amorphous wires connecting weights made of leads to form the random chain structure. The localized MEWs are, indeed, observed by detecting the local vibrations of the wires. Theoretical and experimental results will be presented in detail at the conference. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364639
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  • 2
    Electronic Resource
    Electronic Resource
    Organic electroluminescence cells based on thin films deposited by ultraviolet laser ablation (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2469-2471 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Organic thin films of copper-phthalocyanine (CuPc) and aluminum tris-8-hydroxyquinline (Alq3) were fabricated via KrF laser ablation. In spite of poor crystallinity exhibited in the reconstructed organic films, the CuPc film still works as a hole-transport layer in electroluminescence cells based on the CuPc and Alq3 layers. Electroluminescence at ∼500 nm was obtained with a low initiation voltage of ∼12 V. There is no significant difference in electroluminescence performance for devices fabricated via laser ablation and thermal evaporation. Emission at ∼600 nm caused by energy transfer from Alq3 to 4-(Dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM) is also observed from a DCM-doped Alq3 emission layer. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120114
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  • 3
    Electronic Resource
    Electronic Resource
    Very high speed GaInAs metal-semiconductor-metal photodiode incorporating an AlInAs/GaInAs graded superlattice (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 16-17 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A lateral structure metal-semiconductor-metal photodiode has been fabricated on GaInAs, in which an AlInAs/GaInAs graded superlattice has been incorporated. This photodiode has exhibited a dark current lower than 100 nA, an internal quantum efficiency of greater than 80% at a wavelength of 1.3 μm, and a capacitance of 40 fF, all at the bias voltage of 10 V. The response speed of this photodiode has been characterized by electro-optic sampling to exhibit a full width at half maximum of 14.7 ps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100822
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  • 4
    Electronic Resource
    Electronic Resource
    Room-temperature exciton optical absorption peaks in InGaAsP/InP multiple quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1353-1355 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We grew In1−xGaxAsyP1−y/InP quantum wells (QWs) by low-pressure metalorganic vapor phase epitaxy. The In1−xGaxAsyP1−y layer was closely lattice matched to InP with a composition of y=0.9 (x=0.47y). We investigated structural imperfections such as composition fluctuations, interface roughness, and nonperiodicity analyzing the low-temperature photoluminescence linewidth. We found that the InGaAsP layer composition fluctuated, causing about 5 meV inhomogeneity in the exciton energy level in QWs wider than about 3 nm. Since we obtained very smooth interfaces with less than one monolayer of fluctuation and excellent periodicity by lowering growth temperature to 570 °C, the inhomogeneity of the exciton energy level could be held at 6 meV for 20-period 10-nm multiple QWs. As a result, despite composition fluctuations, a clear room-temperature exciton optical absorption peak was observed at 1.5 μm for the first time to our knowledge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100713
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  • 5
    Electronic Resource
    Electronic Resource
    Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrate (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3585-3587 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a very controllable fabrication process of an extremely narrow (∼10 nm) quantum wire metal-oxide-semiconductor field-effect transistor (MOSFET) on a separation-by-implanted-oxygen (SIMOX) substrate using anisotropic etching and selective oxidation technique. The drain current versus gate voltage characteristics show oscillations caused by Coulomb blockade even at room temperature. The oscillations split into several sharp peaks when the temperature is decreased, indicating that the channel is separated by several serial coupled quantum dots and that the quantum levels of these dots correspond to the observed fine peaks. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116645
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  • 6
    Electronic Resource
    Electronic Resource
    Preparation and characterization of (111)-oriented Fe3O4 films deposited on sapphire (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3168-3172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of various iron oxides including FeO, Fe3 O4 , and α-Fe2 O3 were formed on the α-Al2 O3 (0001) surface by a reactive vapor deposition method and characterized by x-ray diffraction and conversion electron Mössbauer spectroscopy (CEMS). The formation range for each phase was determined as a function of the substrate temperature (Ts ) and oxygen partial pressure (PO2 ). Typically, the deposition of (111)-oriented epitaxial magnetite films could be performed at low temperatures of Ts =523∼623 K and PO2 =1.0–5.0×10−4 Torr. Good stoichiometry of the as-grown films were confirmed by CEMS, and the Verwey transition was clearly detected by measurements of resistivity and CEMS down to 77 K. However, the large lattice mismatch between the substrate and Fe3 O4 resulted in a columnar particle growth. The initially grown phase on such a mismatched substrate was specifically characterized by depositing the Mössbauer active isotope, 57 Fe, only at the deepest layers. On the other hand, by depositing 57 Fe only in the topmost layers, surface layers of well-crystallized films have been found to be rather stable against oxidation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344154
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  • 7
    Electronic Resource
    Electronic Resource
    Free-carrier lifetime and deep-level luminescence in semi-insulating GaAs: The influence of indium doping and growth in a magnetic field (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1800-1804 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of In doping and/or of growth in a magnetic field on the properties of Czochralski-grown semi-insulating GaAs wafers is investigated. We determine the spatial distribution of the free-carrier lifetime by time-resolved luminescence in the ps regime. The results are compared with the spatial distribution of the near-band-edge and deep-level luminescence. The macroscopical and microscopical homogeneity of the carrier lifetime and the luminescence intensities are improved by the growth in a magnetic field. Indium doping leads to similar improvements and additionally to an increase of the absolute value of the lifetime. The combination of In doping and growth in a magnetic field gives the best results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344351
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  • 8
    Electronic Resource
    Electronic Resource
    Light on butterfly mating (1996)
    [s.l.] : Nature Publishing Group
    Nature 382 (1996), S. 119-119 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] SIR - The existence of extraocular pho-toreceptors is widespread within the animal kingdom1. In arthropods such receptors exist in various parts of the body2'7, but their function is unknown in any species. Here we demonstrate that the light sense of genitalia in butterflies, which is mediated by ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/382119a0
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  • 9
    Electronic Resource
    Electronic Resource
    Secondary Grain Growth Behavior of Refractory Metals (1996)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 204-206 (Mar. 1996), p. 647-656 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/01/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.204-206.647.pdf
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  • 10
    Electronic Resource
    Electronic Resource
    Nanograin Formation and Superplastic Deformation in TiAl Mechanically Alloyed Compacts (1996)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 233-234 (Oct. 1996), p. 287-294 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/02/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.233-234.287.pdf
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