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  • 1990-1994  (4)
  • 1994  (2)
  • 1990  (2)
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  • 1990-1994  (4)
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  • 1
    Electronic Resource
    Electronic Resource
    Absolute magnetometry at nanometer transverse spatial resolution: Holography of thin cobalt films in a scanning transmission electron microscope (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7418-7424 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method for the absolute measurement of magnetization at nanometer spatial resolution in magnetic thin films has been developed. A biprism placed in the illumination system of a scanning transmission electron microscope allows the operation of two distinct holography modes. The absolute mode displays a linear change in phase difference for regions of constant magnetization and thickness and the slope determines the magnitude of magnetization. The differential mode displays a constant value of phase difference in these regions allowing a simple and straightforward determination of domain wall profiles. Micromagnetic structure extracted from identical areas of thin Co films is compared using the new holography modes, differential phase constrast Lorentz microscopy and conventional Fresnel Lorentz microscopy in the same instrument.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356658
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Thickness dependence of ferroelectric domains in thin crystalline films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1906-1908 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thickness dependence of ferroelectric domains in thin free-standing BaTiO3 crystalline films has been studied by transmission electron microscopy. It is found that the widths of ferroelectric domains decrease as the film thickness decreases. This phenomenon may indicate that the ferroelectric properties of thin films are weakened due to surface relaxation effects, including lattice relaxation and a change of spontaneous polarization and charge compensation. The weakening of ferroelectric domains is suggested as a transition state from ferroelectric to paraelectric phase of the BaTiO3 thin film. The thickness of the surface relaxation layer of totally nonferroelectric film is on the order of 10 nm. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112835
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Microanalysis on the (200) diffraction intensity to determine the Al concentrations for AlGaAs-GaAs multiple-quantum-well structures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 698-704 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using a nanoprobe electron beam 4 A(ring) in diameter, the [001] nanodiffraction patterns of AlGaAs-GaAs multiple-quantum-well structures have been formed and the epitaxial relationship between AlGaAs and GaAs is confirmed. The intensities of the (200) diffraction disk, monitored by a spot detector, are displayed in two ways: (1) the (200) dark-field scanning transmission electron microscopy (STEM), which shows the layers of AlGaAs and GaAs in contrast, and (2) the (200) line-scan profile, which reveals the (200) intensity distribution of a specimen region of uniform thickness. The thickness and the absolute Al concentration of AlGaAs layers are, respectively, determined from the contrast of, and the (200) thickness contour position in, the (200) dark-field STEM images. The microanalysis on the (200) line-scan profile is used to find the local Al concentrations in AlGaAs layers and to study the interface boundary between the layers of AlGaAs and GaAs. Diffusion of the Al atoms from the AlGaAs layer into the GaAs layer is also reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345774
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    HREM imaging of small Pt clusters dispersed in Y-zeolites (1990)
    Springer
    Catalysis letters 5 (1990), S. 1-11 
    Details
    ISSN: 1572-879X
    Keywords: HREM ; small Pt clusters ; zeolites
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract High resolution electron microscopy (HREM) has been used to study dispersed Pt clusters in NaY- and USY-zeolites. All the samples contained 0.8% Pt and were reduced at temperatures of 300 ° C, 500 ° C and 650 ° C. The size of the Pt clusters ranged from a few å up to ∼ 30 å. When the incident electron beam was sufficiently strong, it caused some of the extremely small metal clusters to sinter. This was usually accompanied by zeolite damage. This in-situ sintering must be taken into consideration when interpreting the particle size distribution results obtained solely by TEM, especially for particles that are smaller than 10 å. The minimum phase contrast imaging condition is demonstrated to be more appropriate than optimum defocus for detecting the extremely small Pt clusters inside the zeolite structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00772087
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    Paper (German National Licenses)
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