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  • 1995-1999  (13)
  • 1990-1994  (4)
  • 1998  (7)
  • 1997  (6)
  • 1990  (4)
  • 1
    Electronic Resource
    Electronic Resource
    The quartic anharmonic oscillator and its associated nonconstant magnetic field (1997)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 38 (1997), S. 4887-4899 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: Quantum mechanical anharmonic oscillators and Hamiltonians for particles in external magnetic fields are related to representations of nilpotent groups. Using this connection the eigenfunctions of the quartic anharmonic oscillator with potential Vα(x)=(α+(x2/2))2 can be used to determine the eigenfunctions of a charged particle in a nonconstant magnetic field, of the form Bz=β2+β3x. The quartic anharmonic oscillator eigenvalues for low-lying states are obtained numerically and a function which interpolates between α(very-much-less-than)0 (a double harmonic oscillator) and α(very-much-greater-than)0 (a harmonic oscillator) is shown to give a good fit to the numerical data. Approximate expressions for the quartic anharmonic oscillator eigenfunctions are then used to get the eigenfunctions for the magnetic field Hamiltonian. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.531924
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  • 2
    Electronic Resource
    Electronic Resource
    Ship waves on a viscous fluid of finite depth (1997)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 9 (1997), S. 940-944 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper we are concerned with the wave generation by a singular forcelet in a viscous fluid of finite depth, where the singularity is located far from the bottom and not very near the free surface. In the first part of this work, the image system of an Oseenlet bounded by a no-slip wall, is considered. It is found that the resultant velocity field can be described by a planar distribution of vertical Oseen doublets and a negative Oseenlet located at the mirror point of the singularity with respect to the plane wall. In the second part of the work we deal with the generation of waves by these solutions. By imposing the linearized free-surface conditions on the solutions obtained from the first part, the wave generated is shown to exhibit the Kelvin ship wave pattern that agrees with observation. The effects of water depth and of submergence on the wave amplitude are also investigated. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.869189
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  • 3
    Electronic Resource
    Electronic Resource
    Rotation of a torus (1990)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 2 (1990), S. 1309-1311 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to study the rotational motion of a vortex ring or the locomotion of bacteria, which propel their cells by rotating their long curved filaments called flagella, the low-Reynolds-number flow resulting from the rotation of a torus is studied. The velocity field is obtained by distributing uniform rotlets along a circle with the rotlet directions tangent to the circle. It is found that the effect of curvature of this ring distribution of uniform rotlets is to displace this rotlet ring from the center of the cross section toward the outside of the torus in the normal direction. The net force exerted on the surrounding fluid by the rotational torus is zero. The net torque acting on the fluid is also zero.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.857580
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  • 4
    Electronic Resource
    Electronic Resource
    Membrane contact, fusion and hexagonal (HII) transitions in phosphatidylethanolamine liposomes (1990)
    s.l. : American Chemical Society
    Biochemistry 29 (1990), S. 2976-2985 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00464a013
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  • 5
    Electronic Resource
    Electronic Resource
    HYPERLIPIDAEMIA INCREASES ALBUMINURIA IN HYPERTENSIVE AND NORMOTENSIVE RATS (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Clinical and experimental pharmacology and physiology 17 (1990), S. 0 
    Details
    ISSN: 1440-1681
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: 1. The effects of a high cholesterol diet on urinary albumin excretion were examined in spontaneously hypertensive (SHR) and Wistar-Kyoto (WKY) rats over 36 weeks.2. Cholesterol feeding resulted in an increase in total-cholesterol and a decrease in HDL-cholesterol without influencing triglyceride levels in both strains.3. Urinary albumin excretion was significantly elevated in cholesterol-fed SHR and WKY rats.4. These results suggest that hyperlipidaemia may be important in acceleration of experimental nephropathy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1440-1681.1990.tb01311.x
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  • 6
    Electronic Resource
    Electronic Resource
    Crystallization and preliminary X-ray studies of Pseudomonas putida histidine ammonium-lyase (1998)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 54 (1998), S. 681-683 
    Details
    ISSN: 1399-0047
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Histidine ammonium-lyase from P. putida was expressed in Escherichia coli, purified to homogeneity, and crystallized by the vapour-diffusion method using polyethylene glycol 3350 as the precipitant. The crystals, which diffract to at least 2.5 Å resolution, exhibit the symmetry of space group P212121, with unit-cell parameters a = 89.7, b = 138.2 and c = 164.8 Å. The asymmetric unit contains a tetramer, and the crystals have a Vm value of 2.41 Å3 Da−1.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0907444997017848
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  • 7
    Electronic Resource
    Electronic Resource
    Photoconductivity of the germanium-doped solid solution p-GaAs0.94Sb0.06 (1997)
    Springer
    Semiconductors 31 (1997), S. 405-406 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract A new mechanism of impurity photoconductivity in semiconductors has been discovered. The form of the long-wavelength photoconductivity spectra observed in p-GaAs0.94Sb0.06: Ge is satisfactorily explained in terms of resonance ionization of impurity levels by phonons excited during absorption of infrared radiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187172
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  • 8
    Electronic Resource
    Electronic Resource
    Density-of-states anomaly and tunneling conductance of Au/p-GaAs0.94Sb0.06 contacts near the metal-insulator transition (1998)
    Springer
    Semiconductors 32 (1998), S. 1270-1276 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The tunneling-current anomaly in Au/p-GaAs0.94Sb0.06 contacts at zero bias voltage (V) → 0) is investigated. Epitaxial layers of the solid solution GaAs0.94Sb0.06 are doped with germanium and have a conductivity close to that at the metal-insulator transition. The square-root dependence of the differential conductance G(V)=(dV/dI)−1 at small values of eV〉kT TT predicted by the Al’tshuler-Aronov theory of quantum corrections to the density of states at the Fermi level in disordered conductors is observed. Satisfactory agreement between the experimental data and theory is observed at hole densities (p) in the layers greater than the critical density for the metal-insulator transition p c , but the relative magnitude of the anomaly is sharply smaller at p〈p c . This confirms the specificity of the condition k F l⩾1 (instead of ) for applicability of the theory for the density-of-states anomaly appearing as a result of electron-electron interactions in a three dimensional electron gas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187613
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  • 9
    Electronic Resource
    Electronic Resource
    Differential resistance of Au/GaAs1−x Sbx tunneling contacts near the zero-bias anomaly. II. Contacts to p-GaAs1−x Sbx (1998)
    Springer
    Semiconductors 32 (1998), S. 517-520 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The differential resistance R(V)=dV/dI of Au/p-GaAs1−x Sbx tunneling contacts was investigated. Schottky barriers were prepared on epitaxial layers of the solid solution p-GaAs1−x Sbx (0.045〈x〈0.125), which were doped with Ge from 0.01 to 5 at.%. It was shown that substantial features are present in the voltage dependences R(V) for Au/p-GaAs1−x Sbx contacts as compared with the data for Au/n-GaAs1−x Sbx structures. A square-root voltage dependence was observed for the conductance G(V)5(dV/dI)−1 versus the bias voltage V near the zero-bias anomaly, in agreement with Al’tshuler-Aronov theory for quantum corrections introduced in the density of states at the Fermi level by the characteristic features of the electron-electron interaction in disordered metals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187431
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  • 10
    Electronic Resource
    Electronic Resource
    Differential resistance of Au/GaAs1−x Sbx tunneling contacts in the zero-bias anomaly region. I. Contacts to n-GaAs1−x Sbx (1998)
    Springer
    Semiconductors 32 (1998), S. 513-516 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The current-voltage characteristics and the differential resistance R(V)=dV/dI of Au/n-GaAs1−x Sbx tunneling contacts were investigated. Schottky barriers were prepared on n-GaAs1−x Sbx epitaxial layers, which were specially not doped, in the composition range 0.01〈x〈0.125. It was shown that the curves R(V) in the electron density range 2×1018⩽n⩽7×1018 cm−3 and temperature range 4.2⩽T⩽295 K are described well by the tunneling theory employing a self-consistent calculation of the potential in the Schottky barrier region. A square-root dependence of the conductance G(V)=(dV/dI)−1 on the bias voltage V was observed in the zero-bias anomaly region in accordance with the Al’tshuler-Aronov theory of quantum corrections introduced in the density of states at the Fermi level by the characteristic features of the electron-electron interaction in disordered metals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187430
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