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  • 1
    Digitale Medien
    Digitale Medien
    Photoconductivity of the germanium-doped solid solution p-GaAs0.94Sb0.06 (1997)
    Springer
    Semiconductors 31 (1997), S. 405-406 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract A new mechanism of impurity photoconductivity in semiconductors has been discovered. The form of the long-wavelength photoconductivity spectra observed in p-GaAs0.94Sb0.06: Ge is satisfactorily explained in terms of resonance ionization of impurity levels by phonons excited during absorption of infrared radiation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1187172
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  • 2
    Digitale Medien
    Digitale Medien
    Density-of-states anomaly and tunneling conductance of Au/p-GaAs0.94Sb0.06 contacts near the metal-insulator transition (1998)
    Springer
    Semiconductors 32 (1998), S. 1270-1276 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract The tunneling-current anomaly in Au/p-GaAs0.94Sb0.06 contacts at zero bias voltage (V) → 0) is investigated. Epitaxial layers of the solid solution GaAs0.94Sb0.06 are doped with germanium and have a conductivity close to that at the metal-insulator transition. The square-root dependence of the differential conductance G(V)=(dV/dI)−1 at small values of eV〉kT TT predicted by the Al’tshuler-Aronov theory of quantum corrections to the density of states at the Fermi level in disordered conductors is observed. Satisfactory agreement between the experimental data and theory is observed at hole densities (p) in the layers greater than the critical density for the metal-insulator transition p c , but the relative magnitude of the anomaly is sharply smaller at p〈p c . This confirms the specificity of the condition k F l⩾1 (instead of ) for applicability of the theory for the density-of-states anomaly appearing as a result of electron-electron interactions in a three dimensional electron gas.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1187613
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  • 3
    Digitale Medien
    Digitale Medien
    Differential resistance of Au/GaAs1−x Sbx tunneling contacts near the zero-bias anomaly. II. Contacts to p-GaAs1−x Sbx (1998)
    Springer
    Semiconductors 32 (1998), S. 517-520 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract The differential resistance R(V)=dV/dI of Au/p-GaAs1−x Sbx tunneling contacts was investigated. Schottky barriers were prepared on epitaxial layers of the solid solution p-GaAs1−x Sbx (0.045〈x〈0.125), which were doped with Ge from 0.01 to 5 at.%. It was shown that substantial features are present in the voltage dependences R(V) for Au/p-GaAs1−x Sbx contacts as compared with the data for Au/n-GaAs1−x Sbx structures. A square-root voltage dependence was observed for the conductance G(V)5(dV/dI)−1 versus the bias voltage V near the zero-bias anomaly, in agreement with Al’tshuler-Aronov theory for quantum corrections introduced in the density of states at the Fermi level by the characteristic features of the electron-electron interaction in disordered metals.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1187431
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  • 4
    Digitale Medien
    Digitale Medien
    Differential resistance of Au/GaAs1−x Sbx tunneling contacts in the zero-bias anomaly region. I. Contacts to n-GaAs1−x Sbx (1998)
    Springer
    Semiconductors 32 (1998), S. 513-516 
    Details
    ISSN: 1063-7826
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Elektrotechnik, Elektronik, Nachrichtentechnik , Physik
    Notizen: Abstract The current-voltage characteristics and the differential resistance R(V)=dV/dI of Au/n-GaAs1−x Sbx tunneling contacts were investigated. Schottky barriers were prepared on n-GaAs1−x Sbx epitaxial layers, which were specially not doped, in the composition range 0.01〈x〈0.125. It was shown that the curves R(V) in the electron density range 2×1018⩽n⩽7×1018 cm−3 and temperature range 4.2⩽T⩽295 K are described well by the tunneling theory employing a self-consistent calculation of the potential in the Schottky barrier region. A square-root dependence of the conductance G(V)=(dV/dI)−1 on the bias voltage V was observed in the zero-bias anomaly region in accordance with the Al’tshuler-Aronov theory of quantum corrections introduced in the density of states at the Fermi level by the characteristic features of the electron-electron interaction in disordered metals.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1134/1.1187430
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