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  • 1990-1994  (3)
  • 1975-1979
  • 1965-1969
  • 1990  (3)
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  • 1990-1994  (3)
  • 1975-1979
  • 1965-1969
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  • 1
    Electronic Resource
    Electronic Resource
    Effect of crystal alignment on the remanence of sintered NdFeB magnets (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4610-4612 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nd15.4Fe77.8B6.8 magnets of various degrees of crystal alignment have been prepared by the conventional powder metallurgy technique. The alignment of these magnets have been determined by x-ray diffraction and fitting the standard deviation of a Gaussian distribution for the relative intensity versus the angle between the normals of (hkl) and the tetragonal c axis. The standard deviation is a good indicator for crystal alignment. An aligning field of 8 kOe is found to be essential to obtain a well-aligned NdFeB magnet. The remanence of sintered magnets is directly affected by the crystal alignment. Furthermore, the effect of crystal alignment on the remanence follows the theoretical prediction of the Stoner–Wohlfarth model. Below the spin reorientation temperature, the effect of crystal alignment on the shape of hysteresis loop becomes more significant. The remanences extrapolated from first and second quadrant of the hysteresis loops have been found to be consistent with the prediction of Stoner–Wohlfarth model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344828
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Solid phase epitaxial growth of GaAs on Si (111) (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1664-1666 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A continuous GaAs film was successfully grown on Si(111) at the initial stage (20 A(ring) growth thickness) by solid phase epitaxial growth. This growth suppressed the island formation observed with direct growth of GaAs on Si. The GaAs(111)A was obtained for the first time on Si(111) with an As prelayer deposited at 20 °C and 350 °C. The GaAs(111)B was also grown on Si(111) with an As prelayer deposited at 580 °C and 700 °C. The polarity of the (111) GaAs epitaxial film depends on the substrate temperature at which the As prelayer is deposited on Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103110
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Fluctuation in the concentrations of vanillylmandelic acid and homovanillic acid in mass screening for neuroblastoma (1990)
    Springer
    European journal of pediatrics 149 (1990), S. 859-861 
    Details
    ISSN: 1432-1076
    Keywords: Neuroblastoma ; Mass screening ; Vanillylmandelic acid ; Homovanillic acid
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Fluctuations in the amount of vanillylmandelic acid (VMA) and homovanillic acid (HVA) were studied in random urine samples from 13 infants with neuroblastoma. In patients with a small tumour, many samples contained amounts below the cut off values, suggesting that detection of a patient with neuroblastoma depended on mathematical probability. Using high performance liquid chromatography a patient with a tumour of about 10 g may well be overlooked, whereas a patient whose tumour weighs over 30 g would probably be detected. With qualitative screening, although more likely to miss a patient with low VMA excretion, a patient with a tumour weighing over 50 g would be detected. In a thorough hospital examination care should be exercised in interpreting borderline values of VMA and HVA; excretion information suggesting the existence of a tumour may aid localization by radiological imaging procedures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02072074
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    Paper (German National Licenses)
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