ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Impurities at the interfaces of HF-treated Si (100) substrates and Si films prepared by low-temperature (900 °C) chemical vapor deposition using SiH2 Cl2 were measured by secondary-ion mass spectroscopy. Si substrates were prepared by 49% HF, 5% HF, and 0.05% HF acid solutions and loaded into the growth chamber without a water rinse. Carbon, fluorine, oxygen and chlorine were detected at the interfaces for 49% HF and 0.05% HF treated substrates, but they were not detected for 5% HF-treated samples. Desorption of the contaminants appeared to be sensitively related to a difference in chemical states of the HF-treated surfaces.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.103588
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