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  • 1
    Electronic Resource
    Electronic Resource
    Interface impurities of low-temperature (900 °C) deposited Si epitaxial films prepared by HF treatments (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 676-677 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Impurities at the interfaces of HF-treated Si (100) substrates and Si films prepared by low-temperature (900 °C) chemical vapor deposition using SiH2 Cl2 were measured by secondary-ion mass spectroscopy. Si substrates were prepared by 49% HF, 5% HF, and 0.05% HF acid solutions and loaded into the growth chamber without a water rinse. Carbon, fluorine, oxygen and chlorine were detected at the interfaces for 49% HF and 0.05% HF treated substrates, but they were not detected for 5% HF-treated samples. Desorption of the contaminants appeared to be sensitively related to a difference in chemical states of the HF-treated surfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103588
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Incorporation of oxygen and chlorine atoms into low-temperature (850 °C) silicon epitaxial films by chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2867-2869 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A correlation between the partial pressure of dichlorosilane gas (SiH2Cl2) and the incorporation of oxygen (O) and chlorine (Cl) atoms into the low-temperature (850 °C) epitaxial films was found. The profiles of O and Cl concentrations in the epitaxial films were measured by secondary ion mass spectroscopy. Incorporation of O and Cl atoms into the growth films during the epitaxial growth was suppressed by increasing the partial pressure of SiH2Cl2. The growth rate linearly increased with the partial pressure of SiH2Cl2 and eventually saturated. Incorporation of O atoms was inhibited and fine removal of Cl atoms was achieved when the growth rates saturated. The epitaxial films with high O and Cl concentrations had a microroughened surface (root mean square of microroughness (approximately-greater-than)0.4 nm). The microroughness was also improved by increasing the partial pressure of SiH2Cl2. The coverage of kinks and/or hollow bridge sites by hydrogen (H) and Cl atoms seems to restrict the reaction of O and water (H2O) with the growth front surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113456
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    Paper (German National Licenses)
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