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  • 1990-1994  (2)
  • 1990  (2)
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  • 1990-1994  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Mechanism for diamond growth from methyl radicals (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2298-2300 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use a 9-carbon model compound to describe a proposed mechanism for homoepitaxial growth of diamond from methyl radicals on a hydrogenated, electrically neutral (100) surface. We estimate enthalpy and entropy changes for each step in the mechanism using group additivity methods, taking into account the types of bonding and steric repulsions found on the (100) surface. Rate constants are estimated based on analogous reactions for hydrocarbon molecules, while gas phase species concentrations are taken from our previous measurements. The rate equations are then integrated. The method, which contains no adjustable parameters or phenomenological constants, predicts a growth rate of between 0.06 and 0.6 μm/h, depending on the local details of the surface. Uncertainties related to the use of a model compound rather than diamond are discussed. The analysis demonstrates that the proposed mechanism is feasible.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102946
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  • 2
    Electronic Resource
    Electronic Resource
    Methyl radical and H-atom concentrations during diamond growth (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6520-6526 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The gas-phase composition at the surface of a growing diamond film was measured as a function of the initial methane (CH4) fraction and, for a 2% methane fraction, as a function of added oxygen (O2). The results were modeled with a one-dimensional reactor flow code that includes diffusion and detailed chemical kinetics. We found that most of the ethylene (C2H4) and ethane (C2H6) that was detected was actually not present in the growth chamber but was instead formed in the probe by recombination of methyl radicals (CH3) that were present in the gas phase. Thus, C2H4 and C2H6 acted as surrogates for CH3 in our system, and measurement of those two stable species allowed us to estimate the mole fraction of the CH3 radical. We then took advantage of the fact that CH3, CH4, H2, and H were in partial equilibrium in the diamond growth chamber in order to estimate the concentration of H. A comparison between the mole fractions of CH3 and H, as determined from our experiments, and the mole fractions calculated from the model shows very good agreement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345128
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    Paper (German National Licenses)
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