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  • 1
    Electronic Resource
    Electronic Resource
    Synthesis, x-ray crystal structures, and cation-binding properties of alkyl calixaryl esters and ketones, a new family of macrocyclic molecular receptors (1989)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 111 (1989), S. 8681-8691 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00205a018
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  • 2
    Electronic Resource
    Electronic Resource
    A four-center, concerted, bimolecular reaction: ICl*(A3.PI.1) + H2 .fwdarw. HCl + HI (1977)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 99 (1977), S. 5798-5799 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00459a044
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  • 3
    Electronic Resource
    Electronic Resource
    The hexA gene of Erwinia carotovora encodes a LysR homologue and regulates motility and the expression of multiple virulence determinants (1998)
    Oxford BSL : Blackwell Science Ltd, UK
    Molecular microbiology 28 (1998), S. 0 
    Details
    ISSN: 1365-2958
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: We have identified a gene important for the regulation of exoenzyme virulence factor synthesis in the plant pathogen Erwinia carotovora ssp. carotovora (Ecc) and virulence and motility in Erwinia carotovora ssp. atroseptica (Eca). This gene, hexA (hyperproduction of exoenzymes), is a close relative of the Erwinia chrysanthemi (Echr ) gene pecT and encodes a member of the LysR family of transcriptional regulators. hexA mutants in both Ecc and Eca produce abnormally high levels of the exoenzyme virulence factors pectate lyase, cellulase and protease. In addition, Eca hexA mutants show increased expression of the fliA and fliC genes and hypermotility. Consistent with a role as a global regulator, expression of hexA from even a low-copy plasmid can suppress exoenzyme production in Ecc and Eca and motility in Eca. Production of the quorum-sensing pheromone OHHL in Ecc hexA is higher throughout the growth curve compared with the wild-type strain. Overexpression of Ecc hexA also caused widespread effects in several strains of the opportunistic human pathogen, Serratia. Low-copy hexA expression resulted in repression of exoenzyme, pigment and antibiotic production and repression of the spreading phenotype. Finally, mutations in hexA were shown to increase Ecc or Eca virulence in planta.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2958.1998.00825.x
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of oxygen on diamond growth (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2179-2181 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ mass spectral measurements of gas composition at the substrate surface were made during filament-assisted diamond growth. The input gases were various mixtures of CH4, O2, and H2 chosen in order to discern the effects of oxygen addition on diamond formation and growth. The gas phase chemistry was modeled as a one-dimensional flow reactor, and the measured and calculated species mole fractions were in good agreement. The model was then used to estimate mole fractions of several atomic and radical species which could not be measured. We find that addition of O2 has only a small effect on the radical mole fractions. However, O2 can reduce the effective initial hydrocarbon mole fraction, which is important because higher quality diamond is grown at a lower initial hydrocarbon mole fraction. Most important, perhaps is that O2 addition leads to the formation of sufficient gas phase OH to remove nondiamond (pyrolytic) carbon from the film. Thus, O2 addition allows diamond films to be grown under composition and temperature conditions which otherwise would produce largely nondiamond carbon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102350
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  • 5
    Electronic Resource
    Electronic Resource
    In situ characterization of diamond nucleation and growth (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 416-417 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Filament-assisted chemical vapor deposition (CVD) diamond film growth on Si(100) was studied using x-ray photoelectron spectroscopy (XPS) to examine the sample at selected intervals during the nucleation and growth processes. The sample was transferred under vacuum from the growth chamber to the attached XPS analysis chamber without exposure to air. Before growth XPS showed that the Si sample is covered by a layer of SiO2 and carbonaceous residue; however, after 15 min of growth both of these substances are removed and replaced by a distinct SiC layer [Si(2p)=100.3 eV and C(1s)=282.7 eV].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100938
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  • 6
    Electronic Resource
    Electronic Resource
    Thermochemistry of BHmCln Calculated at the G-2 Level of Theory (1994)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 98 (1994), S. 11178-11180 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100094a028
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  • 7
    Electronic Resource
    Electronic Resource
    Filament activated chemical vapor deposition of boron carbide coatings (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1757-1759 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, we have demonstrated that boron carbide, an extremely hard and wear-resistant material, can be deposited with hot filament-activated chemical vapor deposition (HFCVD). There are several benefits to using a hot filament system, including a high deposition rate and a relatively low substrate temperature with a process that is not line-of-sight. High purity, apparently amorphous boron carbide films were obtained by the use of a chlorine based precursor (which is less toxic than diborane). This indicates that either the hot filament helps in complete decomposition of BCl3 or the presence of high concentration of atomic hydrogen in a HFCVD environment helps in scavenging the chlorine. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112909
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  • 8
    Electronic Resource
    Electronic Resource
    Pressure and temperature effects on the kinetics and quality of diamond films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5026-5032 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantitative measurements of the effects of pressure on the kinetics and quality of diamond films grown with hot-filament chemical-vapor deposition are reported. Pressure affects growth kinetics largely because it affects transport of precursors to the growing surface. H and CH3 concentrations at the growth surfaces are determined with a recombination enthalpy technique combined with appropriate transport analyses. The growth rate rises and then falls with increasing pressure, although the concentrations of CH3 and atomic hydrogen at the surface are nearly constant. Both the rise and the fall in growth rate at higher pressure are explained with a chemical kinetics model as due in large part to an increase in substrate temperature at higher pressures. The fall at higher pressure (temperature) is due to the rate of thermal desorption of the CH3 precursor increasing more rapidly with temperature than the competing rate of its incorporation: Once these rates become comparable, higher substrate temperatures lower the incorporation rates, and the growth rate decreases. Previously measured Arrhenius plots for diamond-growth kinetics are explained quantitatively. The quality of the diamond, as determined using Raman and scanning electron micrograph data, falls with increasing pressure and substrate temperature. For the first time, this decline in quality is correlated with experimental temperature, H:CH3 ratio, and C2H2 concentration measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355744
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  • 9
    Electronic Resource
    Electronic Resource
    Reaction kinetics on diamond: Measurement of H atom destruction rates (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1022-1026 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There is presently a considerable effort to understand the chemistry of diamond film growth by chemical-vapor deposition. The first measurements of reaction kinetics between diamond and a gas-phase species—H atoms—involved in its formation are described. A remarkably simple method to measure H atom concentrations is developed and the method is used to measure γd, the destruction probability of H atoms on diamond at 20 Torr and 1200 K. It is found that γd=0.12, with an estimated uncertainty of a factor of 2. This value is about half that estimated from gas-phase alkane rate constants and very close to that predicted by molecular-dynamics/Monte Carlo calculations. The agreement to within the estimated uncertainty supports the assumption that gas-phase alkane rate constants are essentially transferable to reactions between a diamond surface and gas-phase species. The H atom measurement technique could be useful for studying growth in other chemical-vapor-deposition systems in which hydrogen is in high concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354948
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  • 10
    Electronic Resource
    Electronic Resource
    Growth on the reconstructed diamond (100) surface (1993)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 97 (1993), S. 23-28 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100103a007
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