Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 1022-1026
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
There is presently a considerable effort to understand the chemistry of diamond film growth by chemical-vapor deposition. The first measurements of reaction kinetics between diamond and a gas-phase species—H atoms—involved in its formation are described. A remarkably simple method to measure H atom concentrations is developed and the method is used to measure γd, the destruction probability of H atoms on diamond at 20 Torr and 1200 K. It is found that γd=0.12, with an estimated uncertainty of a factor of 2. This value is about half that estimated from gas-phase alkane rate constants and very close to that predicted by molecular-dynamics/Monte Carlo calculations. The agreement to within the estimated uncertainty supports the assumption that gas-phase alkane rate constants are essentially transferable to reactions between a diamond surface and gas-phase species. The H atom measurement technique could be useful for studying growth in other chemical-vapor-deposition systems in which hydrogen is in high concentration.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.354948
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