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Digitale Medien

In situ characterization of diamond nucleation and growth (1989)

Belton, David N. ; Harris, Stephen J. ; Schmieg, Steven J. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 54 (1989), S. 416-417

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Filament-assisted chemical vapor deposition (CVD) diamond film growth on Si(100) was studied using x-ray photoelectron spectroscopy (XPS) to examine the sample at selected intervals during the nucleation and growth processes. The sample was transferred under vacuum from the growth chamber to the attached XPS analysis chamber without exposure to air. Before growth XPS showed that the Si sample is covered by a layer of SiO2 and carbonaceous residue; however, after 15 min of growth both of these substances are removed and replaced by a distinct SiC layer [Si(2p)=100.3 eV and C(1s)=282.7 eV].

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.100938

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