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  • 1
    Electronic Resource
    Electronic Resource
    Scaling laws for diamond chemical-vapor deposition. II. Atomic hydrogen transport (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6895-6906 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scaling relations are developed to allow estimation of the atomic hydrogen concentration at the substrate during diamond chemical-vapor deposition for both diffusion-dominated and convection-dominated reactors. In the convection-dominated case, it is shown that there exists an optimal Mach number which maximizes the H concentration delivered to the substrate. In addition, when homogeneous recombination is taken into account, there exists an optimal operating pressure. This analysis shows that a sonic flow of highly dissociated hydrogen at a pressure near atmospheric is optimal for rapid growth of high-quality diamond.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355064
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  • 2
    Electronic Resource
    Electronic Resource
    Temperature dependence of species concentrations near the substrate during diamond chemical vapor deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2021-2029 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements have been made of the temperature dependence of CH3, CH4, and C2H2 very near the substrate during filament-assisted diamond growth. CH3 was detected using (2+1) resonance-enhanced multiphoton ionization (REMPI), and CH4 and C2H2 concentrations were measured using sampling mass spectrometry. A strong dependence of the CH3 REMPI signal on substrate temperature was observed, which at low temperatures may be characterized as having an activation energy of approximately 4±1 kcal/mole. Methane and acetylene, on the other hand, are relatively independent of substrate temperature. These results are most likely due to recombination of methyl to methane or ethane in the cool gas layer near the substrate or on the surface at low substrate temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354765
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  • 3
    Electronic Resource
    Electronic Resource
    Scaling laws for diamond chemical-vapor deposition. I. Diamond surface chemistry (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6888-6894 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simplified model of the gas-surface chemistry occurring during chemical-vapor deposition of diamond thin films is presented. The model results in simple scaling relations, useful for process scale-up and optimization, for growth rate and defect density in terms of the local chemical environment at the substrate. A simple two-parameter expression for growth rate is obtained, which with suitable parameter choices reproduces the results of more detailed mechanisms and experiment over two orders of magnitude in growth rate. The defect formation model suggests that the achievable growth rate at specified defect density scales approximately quadratically with the atomic hydrogen concentration at the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355063
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  • 4
    Electronic Resource
    Electronic Resource
    Numerical modeling of the filament-assisted diamond growth environment (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6393-6400 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A numerical model of the filament-assisted diamond growth environment has been developed and used to calculate temperature, velocity, and species concentration profiles, accounting both for transport and detailed chemical kinetics. The computed hydrocarbon concentrations agree well with previously measured values, when allowance is made for 3D effects not included in our model. Upper-bound, diffusion-limited film growth rates for various assumed growth species have been computed, and it has been found no hydrocarbon species other than CH3, C2H2, or CH4 can account for measured diamond growth rates. The effect of thermal diffusion on H-atom profiles has been examined, and found to be only 10%. Although the environment is far from thermodynamic equilibrium, several reactions are close to partial equilibrium throughout the region from the filament to the substrate. It is also shown that homogeneous H-atom recombination is too slow to explain the experimentally observed decrease in the concentration of H with increasing initial methane concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346858
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  • 5
    Electronic Resource
    Electronic Resource
    Inversion and gain in hydrogenic ion levels induced by photoionization pumping (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1005-1014 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: If a low-Z plasma is subjected to ionizing radiation, stationary inversions on hydrogenic ion level populations occur. The plasma conditions and pumping requirements to achieve gain on the Lyman-α and Balmer-α lines are investigated by means of a collisional-radiative model. The calculations are carried out for two cases: first, for the case in which the electron temperature is determined solely by radiative cooling, and second, for the case in which additional electron cooling is provided. In the first case, measurable gain on the Balmer-α line is found, although the Lyman-α transition remains uninverted. In the second case, the Balmer-α gain is dramatically enhanced, and sizable Lyman-α gain is predicted.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341909
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  • 6
    Electronic Resource
    Electronic Resource
    Diamond growth in a novel low pressure flame (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2695-2696 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond growth using a new low-pressure combustion technique is reported. A large-area hydrogen/oxygen flame is used as the source of atomic hydrogen. Methane diluted in hydrogen is injected into the flame near a heated silicon substrate, on which diamond crystallites nucleate and grow. This technique is potentially capable of large-area film growth, since atomic hydrogen can be generated uniformly over arbitrarily large areas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106876
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  • 7
    Electronic Resource
    Electronic Resource
    Simulations of high-rate diamond synthesis: Methyl as growth species (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 277-279 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of numerical simulations of two high-rate diamond growth environments (oxygen-acetylene torch and dc arcjet) are reported. The calculations account in detail for boundary-layer transport, gas-phase chemistry, and gas-surface chemistry. Diamond growth rates are calculated self-consistently with the gas-phase concentrations, using a recently proposed methyl growth mechanism. The calculated growth rates agree well with the measured values, indicating that this growth mechanism can account for both high- and low-rate diamond growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105620
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  • 8
    Electronic Resource
    Electronic Resource
    Growth on the reconstructed diamond (100) surface (1993)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 97 (1993), S. 23-28 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100103a007
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