Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 1735-1736
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The limiting conditions are presented of selective epitaxial growth (SEG) on a SiO2-patterned Si (001) substrate for Si gas-source molecular-beam epitaxy by use of 100% Si2H6. In the initial stage of growth, epitaxial Si was selectively grown on a Si surface in the wide temperature range of 500–850 °C. On the other hand, polycrystalline Si nucleation on a SiO2 surface was intimately related to the total volume of supply gas. At a substrate temperature of 700 °C and a Si2H6 flow rate of 60 sccm, a SEG layer could be deposited at a rate as high as 645 A(ring)/min.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106234
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