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  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial film growths of artificial (Bi-O)/(Sr-Ca-Cu-O) layered structures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2364-2366 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial film growth of artificial (Bi-O)/(Sr-Ca-Cu-O) layered structures on MgO substrates was carried out using reactive-oxygen-gas dual ion beam sputtering and shuttering technique. A 12 A(ring) Sr-Ca-Cu-O buffer layer seems suitable for perfect epitaxial film growth. Single-phase films having periodicities of 12, 15, and 18 A(ring) (which correspond to bulk 24, 30, and 36 A(ring) phases in Bi oxide superconductors) were selectively grown by adjusting the thickness of a Sr-Ca-Cu-O layer sandwiched by Bi-O bi-planes. A high Tc phase film with a total thickness of about 300 A(ring) showed an onset Tc of 110 K and a zero resistivity temperature of 45 K without post-deposition annealing. The shuttering technique seems to enable the layer-by-layer film growth, and it is very effective for the formation of smooth and perfect epitaxial structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101529
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  • 2
    Electronic Resource
    Electronic Resource
    Structural analysis of imperfect GeSi superlattices grown on Ge(001) substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 117-121 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By combining the complementary techniques of x-ray diffraction and transmission electron microscopy we have been able to accurately determine the structure of imperfect GeSi superlattices (SL's). The samples were epitaxially grown on Ge(001) substrates using Si2H6 and GeH4 source gases. In this report, details of the x-ray experiment and analysis are emphasized. In particular, a model is presented for calculating the diffracted intensity from a SL containing gradients in composition and thickness. Applying this model to the data it is found that between the first and last layers of each SL there exists a roughly 10% increase in the growth rate, without a corresponding change in the alloy composition. This is attributed to a slow increase in the substrate temperature, Tsub, of just a few degrees. A sample grown with a corresponding gradual decrease in the control temperature, TC, was found to be much more uniform. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360660
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  • 3
    Electronic Resource
    Electronic Resource
    Inverse magnetostriction effect on magnetoresistive response for evaporated NiFe and NiFeCo films : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4671-4673 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relations between inverse magnetostriction energy ε and magnetoresistive (MR) response have been investigated for Ni82Fe18 films and Ni82Fe12Co6 films that have about twice the uniaxial anisotropy energy as the NiFe films. To obtain films with various ε values (50–800 J/m3), internal stress σ for the films is changed by the deposition conditions and film thickness control. The σ is measured by the bending method. The σ changes for both films are related to microstructure differences. Hysteresis or Barkhausen jump is observed for the NiFe films with absolute ε value ||ε|| more than 120–130 J/m3, and for the NiFeCo films with ||ε|| more than 300–330 J/m3. The threshold ||ε|| values are on the same order of magnitude as the calculated uniaxial anisotropy for each film. To obtain smooth MR response, it is very important to reduce the ||ε|| to less than the uniaxial anisotropy energy value, by deposition conditions and film thickness control.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348293
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  • 4
    Electronic Resource
    Electronic Resource
    Shielded MR head for high-density magnetic recording (invited) (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4847-4850 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A narrow-gap shielded magnetoresistive (MR) head with a 8-μm track width has been constructed for high-density magnetic recording. The head consists of a pair of NiFe shields and a trilayered MR element between the shields. In the MR element NiFe, Ti, and amorphous CoZrMo films are used. The thickness of the three layers and the shields, as well as the shield gap length, are optimized with a one-dimensional self-consistent calculation. The shielded MR head has been fabricated using calculated thickness parameters for individual layers: 60 nm for CoZrMo with 40 nm NiFe and 20 nm Ti, 1-μm shields, and 0.5 μm for the total shield gap. The reproduced characteristics from the MR head are evaluated with a plated disk. Neither Barkhausen noise nor distortion is observed in the output waveform. The output voltage is 600 μVpp at a 4 mA/μm sense current with 30 kFCI transition density. The D50 transition density is 40 kFCI. These values are in good agreement with the calculated values. Assuming a 12-μm track pitch, crosstalk is −29 dB from off-track crosstalk characteristics. This shielded MR head has a potential to achieve high recording density with 40 kBPI and 2000 TPI for small-size disk drives.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344756
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  • 5
    Electronic Resource
    Electronic Resource
    CoZrMo amorphous films as a soft adjacent layer for biasing magnetoresistive elements with a current shunt layer (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4023-4025 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputtered Co94−xZr6Mox (4.4≤x≤17 at. %) films have been investigated as a soft-adjacent-layer (SAL) material for trilayered magnetoresistive (MR) sensors with a MR element layer, a current shunt layer, and a SAL for biasing layer. The saturation magnetization 4πMs linearly decreases from 14 to 3 kG with an increase in Mo content. The magnetic anisotropy field Hk decreases to a low value, equivalent to that for NiFe MR films, as the Mo content is increased. The magnetoresistance ratio Δρ/ρ is negative, but sufficiently small, namely one-hundredth of that for NiFe films, while the electrical resistivity ρ, about 140 μΩ cm, is 5.6 times greater than that for NiFe films. The films also have a small magnetostriction coefficient λs on the order of 10−7. A 500-A(ring)-thick CoZrMo film with 12 at. % Mo content is selected as the SAL, because a lesser thickness causes an extreme increase in Hk. Higher Mo content degrades the temperature characteristics of the magnetic properties, due to the lower Curie temperature. Trilayered MR-sensors, 100 μm in length and 10 μm in width, are fabricated with a 400-A(ring)-thick NiFe MR layer, a 400-A(ring)-thick Ti layer, and a SAL using this CoZrMo film. An excellent biasing level is achieved with a 15-mA sense current on the MR sensors. CoZrMo amorphous films have a superior capability as a SAL material, especially for the trilayered MR sensors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340537
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  • 6
    Electronic Resource
    Electronic Resource
    Controlling the concentration and position of nitrogen in ultrathin oxynitride films formed by using oxygen and nitrogen radicals (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2940-2942 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of oxynitride films less than 2.0 nm by using oxygen and nitrogen radicals produced by an electron cyclotron resonance plasma in an ultrahigh-vacuum system has been studied. We found that the N concentration can be controlled at values up to 15% and that, although the interface roughness tends to increase with increasing N concentration, supplying oxygen and nitrogen radicals simultaneously decreases the roughness of the film and increases its nitrogen concentration (N: 12.1%, root mean square: 0.12 nm). We also could easily control the nitrogen profile in the oxynitride less than 2.0-nm-thick by using different processing sequences. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126523
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  • 7
    Electronic Resource
    Electronic Resource
    Factors determining the composition of strained GeSi layers grown with disilane and germane (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2579-2581 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth rates and compositions are reported for GeSi alloy films and superlattices epitaxially grown on both Ge(100) and Si(100) substrates using disilane and germane source gases in an ultrahigh vacuum chemical vapor deposition chamber. Although the growth rate changes rapidly with temperature the composition is nearly independent of it. Specifically, we find that the order of the adsorption reaction for disilane and germane is the same, resulting in the composition being determined by the partial pressures and by the ratio of the adsorption reaction rate constants. This ratio depends very weakly on temperature, if at all, and appears to vary slightly with the layer composition. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112644
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  • 8
    Electronic Resource
    Electronic Resource
    Activation efficiency of a B(square root of)3×(square root of)3/Si(111) structure covered with molecular beam deposited amorphous Si or SiOx (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 73-75 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electric activation efficiencies for a-Si/B(square root of)3×(square root of)3/Si(111) and a-Si/B/Si(100) systems were measured before and after annealing by Hall measurement. The efficiency of the latter was lower than that of the former before annealing. But, after annealing, it rose to the former's level, while the former's level remained unchanged. This difference strongly suggests that almost all boron atoms are activated at the a-Si/Si(111) interface because of the (square root of)3×(square root of)3 structure formation. The B(square root of)3×(square root of)3 structure was also preserved at the interface between the Si(111) and the SiOx layer, which had been fabricated by the codeposition of Si and O2 molecular beams at room temperature. The electric activation efficiency for B(square root of)3×(square root of)3 at the interface between SiOx and Si(111) was lower than that between a-Si and Si(111). An a-Si overlayer was effective to activate the boron which formed a (square root of)3×(square root of)3 structure at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103582
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  • 9
    Electronic Resource
    Electronic Resource
    ((square root of)3×(square root of)3)B structure on a (5×5)GexSi1−x/Si (111) surface (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1395-1397 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A ((square root of)3×(square root of)3)B structure was found to be formed on a (5×5) GexSi1−x/Si (111) surface on which Ga or Sn atoms did not form any superstructures. The critical B coverage at which a (7×7) pattern disappeared and only a ((square root of)3×(square root of)3) pattern was visible increased as the fraction (x) of Ge in the substrate layer increased. A Si epitaxial overlayer was grown on the ((square root of)3×(square root of)3)B/50 A(ring) Ge0.4Si0.6/Si (111) structure at a growth temperature of 300 °C. The observed (−2/3,4/3) reflection intensity in grazing x-ray diffraction was 50 times larger than that of a Si epitaxial layer grown on a ((square root of)3×(square root of)3)B/Si (111) structure under the same condition. On a GexSi1−x substrate, the B((square root of)3×(square root of)3) structure is well preserved at the interface probably because of relief of the interface strain that results from the small size of the boron atom.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104095
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  • 10
    Electronic Resource
    Electronic Resource
    Limiting conditions of Si selective epitaxial growth in Si2H6 gas-source molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1735-1736 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The limiting conditions are presented of selective epitaxial growth (SEG) on a SiO2-patterned Si (001) substrate for Si gas-source molecular-beam epitaxy by use of 100% Si2H6. In the initial stage of growth, epitaxial Si was selectively grown on a Si surface in the wide temperature range of 500–850 °C. On the other hand, polycrystalline Si nucleation on a SiO2 surface was intimately related to the total volume of supply gas. At a substrate temperature of 700 °C and a Si2H6 flow rate of 60 sccm, a SEG layer could be deposited at a rate as high as 645 A(ring)/min.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106234
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