Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
57 (1990), S. 1395-1397
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A ((square root of)3×(square root of)3)B structure was found to be formed on a (5×5) GexSi1−x/Si (111) surface on which Ga or Sn atoms did not form any superstructures. The critical B coverage at which a (7×7) pattern disappeared and only a ((square root of)3×(square root of)3) pattern was visible increased as the fraction (x) of Ge in the substrate layer increased. A Si epitaxial overlayer was grown on the ((square root of)3×(square root of)3)B/50 A(ring) Ge0.4Si0.6/Si (111) structure at a growth temperature of 300 °C. The observed (−2/3,4/3) reflection intensity in grazing x-ray diffraction was 50 times larger than that of a Si epitaxial layer grown on a ((square root of)3×(square root of)3)B/Si (111) structure under the same condition. On a GexSi1−x substrate, the B((square root of)3×(square root of)3) structure is well preserved at the interface probably because of relief of the interface strain that results from the small size of the boron atom.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.104095
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