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Electron optical characterization of cubic boron nitride thin films prepared by reactive ion plating (1991)

McKenzie, D. R. ; Cockayne, D. J. H. ; Muller, D. A. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 70 (1991), S. 3007-3012

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Boron nitride films prepared by reactive ion plating from a boron evaporation source were characterized structurally using three independent electron optical techniques: energy filtered electron diffraction with radial distribution function analysis; electron energy-loss spectroscopy of the near-edge structure of the boron K edge; and spectroscopy of the plasmon region of the energy-loss spectrum. Both specimens had a graded BNx layer between the BN layer and the silicon substrate and in addition one specimen had a titanium bonding layer underneath the BNx layer. The presence of c-BN in both specimens was confirmed by all techniques. The specimen with the titanium bonding layer was examined in cross section and showed essentially pure c-BN on the surface. A model for the formation of c-BN assisted by the compressive stress generated during deposition is proposed.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.349330

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