ISSN:
1476-4687
Source:
Nature Archives 1869 - 2009
Topics:
Biology
,
Chemistry and Pharmacology
,
Medicine
,
Natural Sciences in General
,
Physics
Notes:
[Auszug] As silicon-based transistors in integrated circuits grow smaller, the concentration of charge carriers generated by the introduction of impurity dopant atoms must steadily increase. Current technology, however, is rapidly approaching the limit at which introducing additional dopant atoms ceases ...
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1038/416826a
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