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  • 1
    Electronic Resource
    Electronic Resource
    Demonstration of an isolated buried channel field-effect transistor fabricated via in situ patterned electron-beam deposition of Si in GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6039-6041 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A partial monolayer of silane, SiH4, adsorbed on a GaAs(100) surface at 40 K may be fixed in a desired pattern by irradiation with an electron microbeam, and then covered in situ by GaAs grown by molecular-beam epitaxy. The initial rate of Si coverage under irradiation by 1.5 keV electrons is (0.031±0.005) Si per electron per monolayer of silane. Applications include the in situ fabrication via patterned doping of circuit elements and structures with interesting electronic properties. As an example, we have made an isolated buried channel field-effect transistor and measured its properties. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360542
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  • 2
    Electronic Resource
    Electronic Resource
    Ga2O3 films for electronic and optoelectronic applications (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 686-693 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Properties of Ga2O3 thin films deposited by electron-beam evaporation from a high-purity single-crystal Gd3Ga5O12 source are reported. As-deposited Ga2O3 films are amorphous, stoichiometric, and homogeneous. Excellent uniformity in thickness and refractive index was obtained over a 2 in. wafer. The films maintain their integrity during annealing up to 800 and 1200 °C on GaAs and Si substrates, respectively. Optical properties including refractive index (n=1.84–1.88 at 980 nm wavelength) and band gap (4.4 eV) are close or identical, respectively, to Ga2O3 bulk properties. Reflectivities as low as 10−5 for Ga2O3/GaAs structures and a small absorption coefficient (≈100 cm−1 at 980 nm) were measured. Dielectric properties include a static dielectric constant between 9.9 and 10.2, which is identical to bulk Ga2O3, and electric breakdown fields up to 3.6 MV/cm. The Ga2O3/GaAs interface demonstrated a significantly higher photoluminescence intensity and thus a lower surface recombination velocity as compared to Al2O3/GaAs structures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359055
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  • 3
    Electronic Resource
    Electronic Resource
    Capacitance–voltage and current–voltage characterization of AlxGa1−xAs–GaAs structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7091-7098 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlxGa1−xAs–GaAs structures with thin (400–1000 A(ring)) Cr-doped or unintentionally doped AlxGa1−xAs layers (0.3≤x≤1) were grown on n+ GaAs substrate by molecular-beam epitaxy. The AlxGa1−xAs–GaAs interface and the insulating properties of thin AlxGa1−xAs layers at 300 K have been studied by capacitance–voltage and current–voltage measurements, respectively. An AlxGa1−xAs–GaAs interface state density in the lower 109 eV−1 cm−2 range was obtained. The insulating properties of thin AlxGa1−xAs layers were found to be controlled by AlxGa1−xAs–GaAs interface band offsets (ΔEo,ΔEv) and metal–AlxGa1−xAs barrier height ΦBn in accumulation and deep depletion, respectively, rather than by AlxGa1−xAs bulk properties such as specific bulk resistivity. Furthermore, required electrical properties of insulating layers employed in metal–insulator–semiconductor structures are discussed using a self-consistent heterostructure model based on Poisson's equation and current continuity equations. Finally, a fundamental equation for the formation of inversion channels has been derived. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360416
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  • 4
    Electronic Resource
    Electronic Resource
    Interfacial characteristics of AlGaAs after in situ electron cyclotron resonance plasma etching and molecular beam epitaxial regrowth (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3105-3111 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Regrown/processed AlGaAs interfaces using secondary ion mass spectrometry, cross section transmission electron microscopy (TEM), and reflection high energy electron diffraction have been characterized. Two sets of samples, GaAs/Al0.4Ga0.6As (with GaAs on top) and Al0.4Ga0.6As/GaAs (with Al0.4Ga0.6As on top), are used as starting materials. For the GaAs/Al0.4Ga0.6As samples that are first exposed to atmosphere, the experiment is performed in an integrated processing system where etching and regrowth chambers are linked together by ultrahigh vacuum transfer modules. The etching process includes electron cyclotron resonance (ECR) hydrogen plasma cleaning of GaAs native oxides, ECR SiCl4 plasma anisotropic deep etching into Al0.4Ga0.6As, and an optional, brief Cl2 chemical etching. Regrowth is carried out using solid-source molecular beam epitaxy (MBE). Despite the in situ processing, significant amounts of C, Si, and O impurities at the 10, 5, and 50×1012 cm−2 levels exist at the interfaces. However, the impurity level is one order of magnitude smaller than that in air-exposed, ECR plasma etched and MBE regrown Al0.4Ga0.6As/GaAs of the set 2 samples. As revealed using TEM, isolated small particles (presumably correlated to aluminium oxides) exist at the regrown/processed interface of the set 1 samples, but no other defects such as dislocation are seen. Impurities and defects are mainly caused by the high reactivity of AlGaAs during ECR plasma etching.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356162
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  • 5
    Electronic Resource
    Electronic Resource
    Advancing metal–oxide–semiconductor theory: Steady-state nonequilibrium conditions (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7647-7661 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article investigates steady-state nonequilibrium conditions in metal–oxide–semiconductor (MOS) capacitors. Steady-state nonequilibrium conditions are of significant interest due to the advent of wide-gap semiconductors in the arena of MOS (or metal–insulator–semiconductor) devices and due to the scaling of oxide thickness in Si technology. Two major classes of steady-state nonequilibrium conditions were studied both experimentally and theoretically: (i) steady-state deep depletion and (ii) steady-state low level optical generation. It is found that the identification and subsequent understanding of steady-state nonequilibrium conditions is of significant importance for correct interpretation of electrical measurements such as capacitance–voltage and conductance–voltage measurements. Basic implications of steady-state nonequilibrium conditions were derived for both MOS capacitors with low interfaces state density Dit and for oxide semiconductor interfaces with a pinned Fermi level. Further, a photoluminescence power spectroscopy technique is investigated as a complementary tool for direct-gap semiconductors to study Dit and to monitor the interface quality during device fabrication. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365343
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  • 6
    Electronic Resource
    Electronic Resource
    Synthetic magnetic rare-earth Dy-Y superlattices (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4052-4054 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The long-range helimagnetic order in synthetic rare-earth Dy-Y superlattices has been studied. The magnetic spiral of Dy maintains its coherence in a (Dy38 A(ring)-Y38.6 A(ring))80 superlattice, but not in a (Dy38A(ring)-Y120.4 A(ring))80 superlattice where the intervening Y layers are 42 atomic planes thick. Furthermore, the spiral periodicity shows a markedly different temperature dependence from that of bulk Dy, including a smaller range of variation and a "lock-in'' at low temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338524
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  • 7
    Electronic Resource
    Electronic Resource
    Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3920-3927 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the materials growth and properties of both epitaxial and amorphous films of Gd2O3 (κ=14) and Y2O3 (κ=18) as the alternative gate dielectrics for Si. The rare earth oxide films were prepared by ultrahigh vacuum vapor deposition from an oxide source. The use of vicinal Si (100) substrates is key to the growth of (110) oriented, single domain films in the Mn2O3 structure. Compared to SiO2 gate oxide, the crystalline Gd2O3 and Y2O3 oxide films show a reduction of electrical leakage at 1 V by four orders of magnitude over an equivalent oxide thickness range of 10–20 Å. The leakage of amorphous Y2O3 films is about six orders of magnitude better than SiO2 due to a smooth morphology and abrupt interface with Si. The absence of SiO2 segregation at the dielectric/Si interface is established from infrared absorption spectroscopy and scanning transmission electron microscopy. The amorphous Gd2O3 and Y2O3 films withstand the high temperature anneals to 850 °C and remain electrically and chemically intact. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1352688
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  • 8
    Electronic Resource
    Electronic Resource
    GaAs surface reconstruction obtained using a dry process (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2035-2037 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report attaining Ga-terminated (4×2) surface reconstruction on virgin GaAs substrates using a completely dry process at temperatures below the oxide sublimation temperature and without group V overpressure. The native oxides are removed with an electron cyclotron resonance hydrogen plasma treatment, followed by annealing at 500 °C in ultrahigh vacuum, which yields a reconstructed surface suitable for epitaxial overgrowth. Characterization by secondary ion mass spectroscopy and transmission electron microscopy reveals the complete removal of O, reduced C, and high structural order at the epilayer/substrate interface when this preparation method is used before molecular beam epitaxy. Annealing the substrate at a lower temperature yields a nonreconstructed surface possessing significant impurity concentrations, and leads to dislocation defects at the epilayer/substrate interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353148
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  • 9
    Electronic Resource
    Electronic Resource
    Magnetic properties of epitaxial single crystal ultrathin Fe3Si films on GaAs (001) : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6766-6768 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic properties of Fe3Si films with thickness from 2 to 210 monolayers (ML) epitaxially grown on GaAs (001) were studied using a superconducting quantum interference device and alternating gradient force magnetometers. Growth of these single-crystal intermetallic compound films were carried out in a multichamber molecular beam epitaxy (MBE) system. The samples were covered in situ with Au 50 A(ring) thick to prevent oxidation when the samples were removed from the MBE chamber. All the films are ferromagnetic even for samples as thin as 2 ML. The easy magnetization direction of the films is parallel to the film surface. The magnetic coercivity forces (Hc) of the samples increase as the film thickness decreases to 10 ML, and then decrease when the film thickness decreases further to 2 ML.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352479
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  • 10
    Electronic Resource
    Electronic Resource
    High cursive-epsilon gate dielectrics Gd2O3 and Y2O3 for silicon (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 130-132 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on growth and characterization of both epitaxial and amorphous films Gd2O3 of (cursive-epsilon=14) and Y2O3(cursive-epsilon=18) as the gate dielectrics for Si prepared by ultrahigh vacuum vapor deposition. The use of vicinal Si (100) substrates is key to the growth of (110) oriented, single-domain films in the Mn2O3 structure. Typical electrical leakage results are 10−3 A/cm2 at 1 V for single domain epitaxial Gd2O3 and Y2O3 films with an equivalent SiO2 thickness, teq of 15 Å, and 10−6 A/cm2 at 1 V for smooth amorphous Y2O3 films (cursive-epsilon=18) with a teq of only 10 Å. For all the Gd2O3 films, the absence of SiO2 segregation at the interface is established from infrared absorption measurements. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126899
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