ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on degradation mechanisms in 1.3-μm wavelength edge-emitting light-emitting diodes aged for 1000 h at 150 °C and 150 mA studied by transmission electron microscopy. During this degradation, three types of defect structures are generated at the interface between InGaAsP active layer and n-InP buffer layer along the light emitting stripe: (i) 1/2〈100〉{100} faulted extrinsic dislocation loops formed by condensation of point defects, similar to those previously observed in degraded channeled substrate buried heterostructure lasers, (ii) long 1/2〈101〉 dislocation clusters developed along the active stripe, and (iii) 1/3[111] and 1/3[11¯1] faulted Frank loops developed from condensation of point defects onto the 1/2[101] dislocation through dissociative reactions: 1/2[101]→1/6[12¯1]+1/3[111] and 1/2[101]→1/6[121]+1/3[11¯1]. The driving force for these reactions is discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.347635
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