Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 2336-2338
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have prepared Fe-doped InP epilayers by chemical beam epitaxy using a thermal atomic Fe beam. Epilayers having high resistivities ((approximately-greater-than)107 Ω cm) were obtained over a wide range of Fe concentrations. Resistivities as high as 1.3×108 Ω cm have been obtained. Such resistivity is almost equal to the theoretical value of 1.37×108 Ω cm that we estimate for intrinsic InP. The current-voltage characteristics exhibit both an ohmic and a space-charge-limited regime, and are consistent with the theory of single-carrier injection into a trap-free insulator. Pinning of the Fermi level near midgap by Fe-related deep levels is the mechanism by which the epilayer is made highly resistive. At room temperature, these traps are apparently deep enough that the carrier emission rate is negligible.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101120
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